VOx gating tube with novel structure and novel material

Abstract

The invention discloses a VOx gating tube with a novel structure and a novel material. The VOx gating tube comprises a first metal electrode layer, a silver conductive dielectric layer, a chalcogenidematerial layer, a VOx material layer and a second metal electrode layer, by adding the chalcogenide material layer and the silver conductive dielectric layer between the VOx and the bottom electrode,the chalcogenide material layer, the silver conductive dielectric layer and the VOx jointly form the switch layer of the gating tube device, and the switch performance of the gating tube can be improved. When voltage or current excitation is applied to the gating tube; the silver is diffused into the chalcogenide material layer; a conductive wire can be formed in the chalcogenide material; therefore, the current only flows through the conductive wire; the current of other regions is suppressed; conductive wire is very thin, the VOx material can be locally heated, so that part of the VOx material is converted from a metal state to an insulating state, the gating tube is conducted, the threshold voltage or the threshold current of the gating tube can be remarkably reduced, the off-state resistance of the gating tube can be increased, the on-off ratio of the device is remarkably improved, and the leakage current of the device is better inhibited.

Description

technical field [0001] The invention belongs to the technical field of micro-nano electronics, and in particular relates to a VOx gating tube with a novel structure and material. Background technique [0002] Two-terminal nonvolatile memory uses two-terminal gate devices to suppress leakage current problems that are widespread in large-scale arrays. The gating tube device is a switching device, and its working principle is: before reaching the turn-on voltage / current, the gating tube is in the off state, and the resistance is very high, which can effectively suppress the leakage current; The extremely low resistance provides sufficient operating current for the corresponding memory cell. In a large-scale array, the gate is connected to the memory unit. When operating the memory unit, first apply voltage or current to open the gate connected to the selected unit, and then perform read and write operations on the selected memory unit. Wherein, the gate transistors connected ...

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Problems solved by technology

[0004] The advantage of this kind of gating tube is that it can provide a relatively large driving current, and the electrical stability of the device is relatively good, but its biggest disadvantage is that the leakage current of the device is usually relatively large and the switching ratio is small, and the V element and O The ratio of elements has a great influence on the performance of the VOx gate tube. Usually, in order to obtain a material with a suitable composition ratio, after the preparation of the VOx material layer, it needs to be annealed. The annealing temperature is generally around 500°C. Now The three-dimensional memory strictly requires that the device preparation temperature is lower than 400°C, otherwise the subsequent preparation process will destroy the previously prepared fine structure, which makes the preparation process of the VOx gate tube incompatible with it

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