Copper sulfide quantum dot/cuprous thiocyanate heterojunction photoelectric film and preparation method thereof

A cuprous thiocyanate, photoelectric thin film technology, applied in photosensitive devices, circuits, electrical components, etc., can solve the problem of high photo-generated carrier recombination rate, achieve low cost, improve photoelectrochemical performance, and obvious modification effect. Effect

Active Publication Date: 2020-03-24
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention loads CuS quantum dots on the surface of the CuSCN photoelectric thin film, and the CuS / CuSCN heterojunction structure thus formed promotes the migration and separation of photogenerated carriers, and solves the recombination of photogenerated carriers in the CuSCN photoelectric thin film to a large extent. The problem of high efficiency greatly improves the photoelectrochemical performance of the cuprous thiocyanate photoelectric thin film

Method used

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  • Copper sulfide quantum dot/cuprous thiocyanate heterojunction photoelectric film and preparation method thereof
  • Copper sulfide quantum dot/cuprous thiocyanate heterojunction photoelectric film and preparation method thereof
  • Copper sulfide quantum dot/cuprous thiocyanate heterojunction photoelectric film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0018] (1) Dissolve 4 mmol of anhydrous copper acetate in 40 mL of an aqueous solution containing 0.01 mmol of surfactant polyvinylpyrrolidone (PVP, molecular weight 58000 g / mol), at 70 o After stirring for 30 minutes under C, a 0.1 M copper acetate solution was formed; then at a constant temperature of 70 o Add 40 mL of 0.1 M thiourea solution dropwise to the copper acetate solution under stirring conditions, and continue to keep the temperature for 70 o After stirring at C for 60 minutes, stop heating; after the solution is naturally cooled to room temperature, the precipitate is collected by high-speed centrifugation. o C and dried overnight, CuS quantum dots can be prepared.

[0019] (2) Disperse 3.2 mg CuS quantum dots obtained above into 200 mL deionized water to prepare CuS quantum dot dispersion with a concentration of 16 mg / L; then 2.4 mmol copper sulfate pentahydrate (CuSO 4 ∙5H 2 O), 2.4 mmol ethylenediaminetetraacetic acid (EDTA) and 0.6 mmol potassium thiocyana...

Embodiment 2

[0021] (1) The preparation process of CuS quantum dots is the same as in Example 1.

[0022] (2) On the premise of obtaining the above-mentioned CuS quantum dots, 2 mg of CuS quantum dots obtained above were dispersed into 200 mL of deionized water to prepare a dispersion of CuS quantum dots with a concentration of 10 mg / L; then 2.4 mmol Copper Sulfate (CuSO 4 ∙5H 2 O), 2.4 mmol ethylenediaminetetraacetic acid (EDTA) and 0.6 mmol potassium thiocyanate (KSCN) were sequentially dissolved into the CuS quantum dot dispersion, and stirred to prepare CuSO 4 Precursor solution with a concentration of 12 mM and containing CuS quantum dots; the prepared precursor solution was transferred to the electrochemistry of a three-electrode system equipped with a platinum wire counter electrode, a calomel reference electrode, and a cleaned FTO or ITO conductive glass. In the reaction tank, at a deposition potential of -0.4 V and a deposition charge of 80 mC / cm 2 Electrochemical deposition wa...

Embodiment 3

[0024] (1) The preparation process of CuS quantum dots is the same as in Example 1.

[0025] (2) On the premise of obtaining the above-mentioned CuS quantum dots, disperse the 6 mg CuS quantum dots obtained above into 200 mL deionized water to prepare a dispersion of CuS quantum dots with a concentration of 30 mg / L; then 2.4 mmol five Copper Sulfate (CuSO 4 ∙5H 2 O), 2.4 mmol ethylenediaminetetraacetic acid (EDTA) and 0.6 mmol potassium thiocyanate (KSCN) were sequentially dissolved into the CuS quantum dot dispersion, and stirred to prepare CuSO 4 Precursor solution with a concentration of 12 mM and containing CuS quantum dots; the prepared precursor solution was transferred to the electrochemistry of a three-electrode system equipped with a platinum wire counter electrode, a calomel reference electrode, and a cleaned FTO or ITO conductive glass. In the reaction tank, at a deposition potential of -0.3 V and a deposition charge of 60 mC / cm 2 Electrochemical deposition was c...

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Abstract

The invention belongs to the technical field of semiconductor photoelectricity, and particularly relates to a copper sulfide quantum dot / cuprous thiocyanate (CuS QDs / CuSCN) heterojunction photoelectric film and a preparation method thereof. The invention provides a CuS QDs / CuSCN heterojunction photoelectric thin film and a preparation method thereof. The film is characterized in that CuS quantum dots are loaded on the surface of a CuSCN nanorod thin film through an electrochemical deposition process to construct and prepare a CuS quantum dot / CuSCN heterojunction photoelectric thin film. The heterojunction formed by the CuS quantum dots and the CuSCN effectively promotes the separation of photo-generated charges and reduces the recombination of photo-generated carriers, and the photoelectrochemical performance of the CuSCN photoelectric thin film is greatly improved. The CuSQDs / CuSCN heterojunction photoelectric thin film and the preparation method thereof provided by the invention havethe advantages that the modification means is simple, the heterojunction structure is easy to regulate and control, the modification effect is obvious, the cost is low and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, and in particular relates to a copper sulfide quantum dot / cuprous thiocyanate heterojunction optoelectronic thin film and a preparation method thereof. Background technique [0002] Cuprous thiocyanate (CuSCN) is a wide-bandgap (3.6 eV) p-type semiconductor with stable chemical properties, high film transmittance, and hole carrier mobility (0.01-0.1 cm 2 V -1 the s -1 ) higher characteristics, in recent years as an inorganic hole transport layer or photocathode material in the field of photoelectrochemistry (such as: photocatalytic water splitting, photocatalysis, solar cells, photovoltaic devices, sensors, etc.) has received great attention and wide application . It has been demonstrated that it can be used as a hole-transporting material for dye-sensitized solar cells, perovskite solar cells, and quantum dot-sensitized solar cells. However, the photoelectric conversi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0336H01G9/20C25D9/04C25D7/12
CPCC25D7/12C25D9/04H01G9/20H01L31/0336
Inventor 陈达李灵惠梁俊辉其他发明人请求不公开姓名
Owner CHINA JILIANG UNIV
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