Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metal silicide forming method

A metal silicide and metal layer technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as excessive metal diffusion and uneven thickness of metal silicide

Active Publication Date: 2020-03-17
CHANGXIN MEMORY TECH INC
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present disclosure is to provide a method for forming metal silicide, and then at least to a certain extent overcome the problems of excessive diffusion of metal and uneven thickness of metal silicide caused by the existing method of forming metal silicide

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal silicide forming method
  • Metal silicide forming method
  • Metal silicide forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0027] Exemplary embodiments of the present disclosure firstly provide a method for forming a metal silicide, referring to image 3 As shown, the method includes the following steps S110-S130:

[0028] Step S110, depositing a metal layer on the surface of the silicon substrate.

[0029] Step S120, performing a first heat treatment to diffuse metal atoms in the metal layer into the silicon substrate to form a first metal silicide.

[0030] Ste...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a metal silicide forming method, and belongs to the technical field of semiconductors. The method comprises the following steps: depositing a metal layer on the surface of a silicon substrate; performing first heat treatment to diffuse metal atoms of the metal layer into the silicon substrate to form a first metal silicide; carrying out second heat treatment to convert the first metal silicide into second metal silicide, wherein the temperature of the first heat treatment is lower than that of the second heat treatment. According to the invention, excessive diffusion ofmetal atoms in the forming process of the metal silicide can be reduced, the thickness uniformity of the metal silicide is improved, the performance of a semiconductor device is improved, and the service life of the semiconductor device is prolonged.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a method for forming a metal silicide. Background technique [0002] The information disclosed in this Background section is only for enhancement of understanding of the background of the disclosure and therefore it may contain information that does not form the prior art that is already known in the art to a person of ordinary skill in the art. [0003] In semiconductor manufacturing, metal silicides are usually formed by depositing metal atoms and diffusing. Most of the diffusion is achieved by rapid thermal processing (RTP) process, so that the metal atoms above the silicon substrate diffuse to the silicon substrate during rapid thermal processing. , the two react to form metal silicides. Contents of the invention [0004] In the existing metal silicide formation method, the rapid heat treatment generally adopts immersion annealing method (Soakanneal), becau...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/28H01L21/67
CPCH01L21/67248H01L21/28097
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com