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Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve problems such as poor threshold voltage uniformity, large on-resistance, and low electron mobility, so as to reduce process difficulty and improve device reliability and yield.

Active Publication Date: 2020-03-10
DYNAX SEMICON
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Embodiments of the present invention provide a semiconductor device and a manufacturing method thereof, which solve the problems of large on-resistance, poor threshold voltage uniformity, and low electron mobility in existing semiconductor devices

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0025] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described through implementation with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are the embodiment of the present invention. Some, but not all, embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0026] refer to figure 1 Shown is a schematic diagram of a semiconductor device provided by an embodiment of the present invention. The semiconductor device includes: a substrate 10, an epitaxial multilayer structure 20 formed on the substrate 10, and a gate structure 30 formed on the epitaxial multilayer structure 20, and the gate structure 30 is embe...

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Abstract

The embodiment of the invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate, an epitaxial multilayer structure formed on the substrate, and a gate structure formed on the epitaxial multilayer structure, wherein the gate structure is embedded in the epitaxial multilayer structure, the gate structure sequentially comprises a gate channel layer, a gate modulation layer and a gate metal layer, the material of the gate modulation layer contains an aluminum component, and the content of the aluminum component is a variable. Thegate modulation layer can effectively avoid the problem that the on-resistance is increased due to the height difference between the gate channel layer and the surrounding channel layer, the thresholdvoltage of the semiconductor device is accurately controlled, and the uniformity of the threshold voltage and the electron mobility are improved.

Description

technical field [0001] Embodiments of the present invention relate to microelectronic technology, and in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Gallium nitride (GaN)-based semiconductor materials have the characteristics of large band gap, high voltage resistance, high temperature resistance, corrosion resistance, and radiation resistance. Moreover, GaN can form a high electron mobility transistor (HEMT) through a heterostructure, which has the advantages of high breakdown voltage, low on-resistance, high switching frequency, and low loss. It is an ideal material for making power devices. GaN HEMTs are classified into enhancement mode and depletion mode according to their different conduction modes. [0003] There is a strong two-dimensional electron gas and high electron mobility in the AlGaN / GaN heterostructure, and the device formed by the AlGaN / GaN heterojunction is usually a depletion device. However, the...

Claims

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Application Information

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IPC IPC(8): H01L29/10H01L29/20H01L29/423H01L21/335H01L29/778
CPCH01L29/42316H01L29/1029H01L29/2003H01L29/778H01L29/66462
Inventor 裴轶钱洪途吴星星
Owner DYNAX SEMICON
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