Seven-cavity vertical PECVD-PVD integrated silicon wafer coating process

Abstract

The invention relates to a seven-cavity vertical PECVD-PVD integrated silicon wafer coating process. A vacuum preheating feeding cavity, an intrinsic amorphous silicon film deposition PECVD cavity, adoped amorphous silicon film deposition PECVD cavity, first, second and third TCO film deposition PVD cavities and a discharging cavity are sequentially connected through vacuum locks which are arranged at the heads and tails of the cavities. A moving device penetrates through and connects the cavities and the vacuum locks from front to back, a vertical support plate is arranged in the vacuum preheating feeding cavity, the vertical support plate is arranged on the moving device and is in the state of being capable of moving from front to back in integrated equipment, a sputtering target is arranged in the second TCO thin film deposition PVD cavity, and each cavity is externally connected with an ultra-pure gas path, a heating system and a vacuumizing system. Procedures in the product preparation process can be effectively prevented from being exposed to air, the performance of a crystalline silicon heterojunction solar cell is improved, and the production cost of the cell is reduced.

Description

technical field [0001] The invention relates to the field of high-efficiency crystalline silicon solar cell manufacturing, in particular to a 7-cavity vertical PECVD-PVD integrated silicon wafer coating process for solar cell manufacturing. Background technique [0002] Currently, a class of advanced and efficient crystalline silicon solar cells is based on amorphous silicon / crystalline silicon heterojunction structures. The two key steps in its production technology are the deposition of amorphous silicon-based films (including intrinsic layers and doped layers, made of amorphous silicon, microcrystalline silicon, nano-silicon, oxygen-doped amorphous silicon, etc.) and transparent conductive Deposition of the oxide TCO layer. The more commonly used deposition methods for amorphous silicon-based thin films are low-temperature chemical vapor deposition methods, including plasma chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HECVD); the TCO layer is...

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Problems solved by technology

The overall system is very complex

Moreover, because the product must be exposed to the air during the transfer process between the CVD and PVD systems, the surface of the product is affected by water vapor, oxygen, dust, etc. in the air, resulting in performance degradation; the operating costs in production are high, and the number of workers required is relatively large. many

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