Cleaning process of germanium single crystal single-sided polished wafer

Abstract

The invention provides a cleaning process of a germanium single crystal single-sided polished wafer. The cleaning process is characterized in that germanium single-crystal single-sided polished waferis roughly polished by pasting a UV film on the back surface, the UV film on the back surface of the wafer is removed, the wafer is subjected to soaking in concentrated sulfuric acid twice to remove residual glue contamination on the edge of the germanium single-crystal single-sided polished wafer, fine polishing is performed, cleaning is performed with potassium hydroxide solution after fine polishing, and lastly, an SC-1 liquid cleaning mode is adopted, so surface contamination of the germanium single-crystal single-side polished wafer is effectively removed, the surface requirement of cleaning-free box opening for use is met, the surface quality of the germanium single-side polished wafer is greatly improved, and a good foundation is laid for subsequent improvement of the quality of anepitaxial layer of the germanium single-side polished wafer. The cleaning process is advantaged in that the cleaning process is simple to operate and easy to implement, cleaning difficulty of the germanium single-crystal single-sided polished wafer is reduced, and batch production is easy to realize.

Description

technical field [0001] The invention relates to semiconductor material processing technology, in particular to a cleaning process for germanium single-crystal single-sided polished wafers. Background technique [0002] Germanium single crystal single-sided polished sheet has good mechanical properties and thermal conductivity, and is mainly used in high-efficiency batteries. High temperature, high temperature resistance, radiation resistance, strong reliability and other advantages, the compound battery needs to grow multi-layer crystal materials in the MOCVD process, and it is a heterojunction growth, which is prone to lattice distortion. Therefore, the compound battery puts forward relatively strict requirements on the surface quality of germanium single crystal single-sided polished wafers. [0003] In the current processing of germanium single crystal single-sided polished wafers, UV film is used for rough polishing and fine polishing. Surface contamination and particl...

AI Technical Summary

Problems solved by technology

[0003] In the current processing of germanium single crystal single-sided polished wafers, UV film is used for rough polishing and fine polishing. Surface contamination and particles, germanium single-crystal polished wafers produced after epitaxy have serious problems of fog spots, fingerprints, and water marks on the surface. The conversion efficiency of cells made of such epitaxial wafers is low and cannot meet the requirements