3D memory device and manufacture method thereof

Abstract

The invention discloses a 3D memory device and a manufacturing method thereof. The 3D memory device comprises a substrate; an isolation layer covering the substrate; a laminated structure covering theisolation layer and comprising a plurality of gate conductor layers and interlayer insulating layers which are alternately stacked; and a plurality of channel columns penetrating through the laminated structure and the isolation layer, wherein the substrate is provided with a plurality of epitaxial parts, the channel columns are respectively in contact with the corresponding epitaxial parts and the gate conductor layers are separated from the epitaxial structures by the isolation layer at the epitaxial parts. The channel columns are in contact with the epitaxial parts acting as the epitaxialstructures to provide the selection transistor and the storage transistor of the 3D memory device with the laminated structure. Compared with the conventional process, the substrate is directly connected into the form of having the epitaxial parts to replace the scheme of forming the epitaxial structures in contact with the substrate at the bottom of the channel hole in the conventional process soas to avoid the problems of inconsistent height of the epitaxial structures in the deep hole, uneven surface and difficult control of ion doping concentration.

Description

technical field [0001] The present invention relates to memory technology, and more particularly, to 3D memory devices and methods of manufacturing the same. Background technique [0002] The development direction of semiconductor technology is the reduction of feature size and the improvement of integration. For storage devices, the improvement of the storage density of the storage device is closely related to the progress of the semiconductor manufacturing process. As the feature size of semiconductor manufacturing processes becomes smaller and smaller, the storage density of memory devices becomes higher and higher. [0003] In order to further increase storage density, three-dimensionally structured memory devices (ie, 3D memory devices) have been developed. The 3D storage device includes a plurality of storage units stacked along the vertical direction, the integration degree can be doubled on a unit area wafer, and the cost can be reduced. [0004] In 3D memory devi...

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Problems solved by technology

[0005] The purpose of the present invention is to provide an improved 3D memory device and its manufacturing method. By directly using the substrate to form the epitaxial part and using the epitaxial part as the epitaxial structure, the height, surface flatness and ion doping concentration of the epitaxial structure are solved. The problem that the process limit cannot reach the standard

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