Semiconductor device and method of forming the same

Abstract

A method for forming a semiconductor device: a semiconductor substrate is provided, and a dummy gate structure is provided on the semiconductor substrate, and the dummy gate structure includes a dummy gate dielectric layer and a dummy gate electrode layer on the dummy gate dielectric layer. The substrate on both sides of the dummy gate structure has a source region and a drain region; an interlayer dielectric layer is formed on the semiconductor substrate, the source region and the drain region, and the interlayer dielectric layer covers the dummy gate The sidewall of the structure; remove the dummy gate electrode layer until the top surface of the dummy gate dielectric layer is exposed, and form an opening in the interlayer dielectric layer, the opening includes a first region, the first region and the drain The regions are adjacent; a gate dielectric layer is formed on the sidewall of the opening and the surface of the dummy gate dielectric layer; after the gate dielectric layer is formed, the first ion implantation is performed on the gate dielectric layer of the first region, and the improved ions are used It is used to fill the defects and atomic gaps of the gate dielectric layer. The reliability of the semiconductor device formed by the method is better.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] MOS (Metal-Oxide-Semiconductor) transistor is one of the most important elements in modern integrated circuits. The basic structure of MOS transistors includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and the gate structure includes : a gate dielectric layer on the surface of the semiconductor substrate and a gate electrode layer on the surface of the gate dielectric layer; source and drain doped regions in the semiconductor substrate on both sides of the gate structure. [0003] With the continuous development of integrated circuit technology, the size of MOS devices shrinks accordingly, and the lateral electric field in the channel increases, causing a large number of hot carriers to increase, resulting in an increase in the ...

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Problems solved by technology

[0003] With the continuous development of integrated circuit technology, the size of MOS devices shrinks accordingly, and the lateral electric field in the channel increases, causing a large number of hot carriers to increase, resulting in an increase in the possibility of hot carriers entering the gate dielectric layer, and the gate dielectric layer is easy to Thermal runaway occurs, reducing the reliability of the device

[0004] The performance of semiconductor devices composed of field effect transistors in the prior art needs to be improved

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