Bidirectional ESD protection device

Abstract

A bidirectional ESD protection device is a chip composed of an N+ substrate layer 101, a P-type epitaxial layer 102 and an N+ doped layer 103. The P-type epitaxial layer 102 is arranged above the N+ substrate layer 101, and the N+ doped layer 103 is arranged above the P-type epitaxial layer 102. Deep isolation grooves 104 are formed in the left side and the right side of the chip; a doped polycrystalline floating island 108 is arranged in the deep isolation groove 104 close to the central area of the chip; an isolation dielectric layer 105 is arranged between the deep isolation groove 104 anda front electrode 106; the front electrode 106 is arranged above the N+ doped layer 103 and the isolation dielectric layer 105; and a back electrode 107 is formed below the N+ substrate layer 101. Aiming at ESD protection applied to common capacitance and large current discharge capacity, a trench gate-isolated longitudinal triode structure is adopted, and the electrostatic discharge problem of anintegrated circuit is solved.

Description

technical field [0001] The invention belongs to the field of electronic science and technology, and mainly relates to the field of integrated circuit electrostatic discharge (ESD-Electrostatic Discharge) protection, in particular to a bidirectional ESD protection device. Background technique [0002] Electrostatic discharge (ESD) phenomenon widely exists in the daily environment, it is indeed a fatal threat to precision integrated circuits, and it is one of the important reasons for damage or even failure of integrated circuit products. Integrated circuit products are extremely vulnerable to ESD during their production, manufacturing, assembly and working process, resulting in internal damage and reduced reliability of the product. And its application environment will also have corresponding requirements for parameters such as capacitance, breakdown voltage, and clamping characteristics. [0003] For different applications, the system has different requirements on the param...

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Problems solved by technology

[0004] The invention solves the problems of chip stress unevenness and voltage consistency encountered by ordinary capacitive bidirectional protection devices using trench isolation.

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