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Preparation method of high-crystallinity vanadium film

A high crystallinity, thin film technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problem of irregular particle shape on the surface of vanadium thin film, and achieve remarkable grain growth orientation, simple steps, good repeatability

Inactive Publication Date: 2020-01-03
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the vanadium films prepared by existing methods are generally vanadium films with an amorphous structure, and the shape of particles on the surface of vanadium films is irregular. Therefore, it is of great significance to study crystalline vanadium films with regular surface arrangement and good crystallinity.

Method used

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  • Preparation method of high-crystallinity vanadium film
  • Preparation method of high-crystallinity vanadium film
  • Preparation method of high-crystallinity vanadium film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A kind of highly crystalline vanadium film, its preparation method comprises the following steps:

[0025] 1) Two V targets of the same specification (dia50×4mm, purity 99.95%) are symmetrically installed on a pair of sputtering targets in the deposition chamber of the target unbalanced magnetron sputtering equipment, and the distance between the target surfaces is adjusted to 13mm;

[0026] 2) Select a single crystal Si(111) substrate as the substrate, put the substrate in acetone and alcohol for ultrasonic cleaning, then rinse with deionized water, and blow dry with nitrogen;

[0027] 3) Place the substrate treated in step 2) on the substrate stage in the vacuum chamber of the magnetron sputtering equipment, located in the middle of the two vanadium targets, and evacuate to the background vacuum (5×10 -4 Pa);

[0028] 4) Feed argon and hydrogen into the deposition chamber of the magnetron sputtering equipment (the purity of both argon and hydrogen is 99.999%), adjus...

Embodiment 2

[0034] A kind of highly crystalline vanadium film, its preparation method comprises the following steps:

[0035] 1) Two V targets of the same specification (dia50×4mm, purity 99.95%) are symmetrically installed on a pair of sputtering target seats in the deposition chamber of the target unbalanced magnetron sputtering equipment, and the distance between the target surfaces is adjusted. 11mm;

[0036] 2) Select a single crystal Si(111) substrate as the substrate, put the substrate in acetone and alcohol for ultrasonic cleaning, then rinse with deionized water, and blow dry with nitrogen;

[0037] 3) Place the substrate treated in step 2) on the substrate stage in the cavity of the magnetron sputtering equipment, located in the middle of the two vanadium targets, and evacuate to the background vacuum (5×10 -4 Pa);

[0038] 4) Pass argon and hydrogen into the deposition chamber of the magnetron sputtering equipment, adjust the gas flow meter to stabilize the gas flow, and adju...

Embodiment 3

[0044] A kind of highly crystalline vanadium film, its preparation method comprises the following steps:

[0045] 1) Two V targets of the same specification (dia50×4mm, purity 99.95%) are symmetrically installed on a pair of sputtering target seats in the deposition chamber of the target unbalanced magnetron sputtering equipment, and the distance between the target surfaces is adjusted. 9mm;

[0046] 2) Select a single crystal Si(111) substrate as the substrate, put the substrate in acetone and alcohol for ultrasonic cleaning, then rinse with deionized water, and blow dry with nitrogen;

[0047] 3) Place the substrate treated in step 2) on the substrate stage in the cavity of the magnetron sputtering equipment, located in the middle of the two vanadium targets, and evacuate to the background vacuum (5×10 -4 Pa);

[0048] 4) Pass argon and hydrogen into the deposition chamber of the magnetron sputtering equipment, adjust the gas flow meter to stabilize the gas flow, and adjus...

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Abstract

The invention provides a preparation method of a high-crystallinity vanadium film. The method comprises the following steps: 1) symmetrically oppositely placing two vanadium targets with the same specification on a pair of sputtering target seats in a deposition cavity of a target-to-target unbalanced magnetron sputtering device, and adjusting the distance between the target surfaces to be 5-20 cm; 2) placing the substrate subjected to the pre-cleaning treatment on a substrate table of a deposition cavity of magnetron sputtering equipment, locating the substrate table at the middle position oftwo vanadium targets, and vacuumizing to background vacuum; 3) and introducing argon and hydrogen into a deposition cavity of the magnetron sputtering equipment, and opening a vanadium target power supply to start sputtering deposition of the vanadium film after the deposition pressure is stable, namely depositing on the surface of the substrate to obtain the high-crystallinity metal vanadium film. The method adopts a target-to-target unbalanced magnetron sputtering method to prepare the high-crystallinity vanadium film under proper deposition conditions, and has the advantages of simple steps, good repeatability, good bonding property of the vanadium film and the substrate, and obvious grain growth orientation of the vanadium film.

Description

technical field [0001] The invention belongs to the technical field of metal thin film materials, and in particular relates to a preparation method of a high crystallinity vanadium thin film. Background technique [0002] Metal vanadium is a rare metal material with high hardness, high melting point, good thermal conductivity, electrical conductivity, wear resistance, corrosion resistance and excellent nuclear shielding performance. Applied on the surface of some metal materials as a protective coating. At present, the vanadium films prepared by existing methods are generally vanadium films with an amorphous structure, and the shape of particles on the surface of vanadium films is irregular. Therefore, it is of great significance to study crystalline vanadium films with regular surface arrangement and good crystallinity. Contents of the invention [0003] The object of the present invention is to address the above-mentioned deficiencies in the prior art, and propose a met...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16C23C14/18
CPCC23C14/165C23C14/185C23C14/352
Inventor 章嵩郑龙涂溶张联盟
Owner WUHAN UNIV OF TECH
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