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Preparation method of composite structural material substrate for thin-film gallium arsenide solar cells

A technology of solar cells and composite structures, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of low specific strength and high weight, and achieve the effects of high specific strength, reduced device weight, and small density

Active Publication Date: 2021-04-13
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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Problems solved by technology

Its disadvantage is that the specific strength is small and the weight is high

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  • Preparation method of composite structural material substrate for thin-film gallium arsenide solar cells
  • Preparation method of composite structural material substrate for thin-film gallium arsenide solar cells
  • Preparation method of composite structural material substrate for thin-film gallium arsenide solar cells

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[0043] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0044] On the contrary, the invention covers any alternatives, modifications, equivalent methods and schemes within the spirit and scope of the invention as defined by the claims. Further, in order to make the public have a better understanding of the present invention, some specific details are described in detail in the detailed description of the present invention below. The present invention can be fully understood by those skilled in the art without the description of these detailed parts.

[0045] see Figure 1 to Figure 3 ,

[0046] The embodiment of the present invention provides a metho...

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Abstract

The invention discloses a method for preparing a thin-film gallium arsenide solar cell composite structure material substrate, which belongs to the field of semiconductor technology, and is characterized in that it comprises the following steps: S1, photolithographic pattern; S2, electrodeposition; S3, vacuum Encapsulation; the specific manufacturing steps are as follows: S301. Laminate the electrodeposited patterned substrate, encapsulant, and polyimide film in sequence and put them into the laminator; S302. Set the program of the laminator to perform the vacuum packaging process. Not greater than 1Pa, the pressure range is 20Pa‑1kPa. The temperature range is 80°C-200°C, and the time range is 20min-200min; S303. After the program ends, take out the product and cool it down. By adopting the above technical solution, the present invention enables the thin-film gallium arsenide solar cell to realize the characteristics of reduced weight, flexibility and bendability. make it have a wider range of applications.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for preparing a thin-film gallium arsenide solar cell composite structure material substrate. Background technique [0002] Metal-organic compound vapor phase epitaxy technology, referred to as MOCVD, is to use hydrogen carrier gas to send metal-organic compound vapor and non-metallic hydride into the heated substrate in the reaction chamber through multiple switches, and finally grow epitaxy on it through decomposition reaction. layer of advanced technology. Its growth process involves complex processes of fluid mechanics, gas phase and solid surface reaction kinetics and the coupling of the two. Generally, its epitaxial growth is carried out under thermodynamic near-equilibrium conditions. [0003] The Group III-V epitaxial structure grown on gallium arsenide substrate is an important technical means for making solar cells and LEDs. Among them, so...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/048H01L31/0392
CPCH01L31/03926H01L31/0481H01L31/184Y02E10/544Y02P70/50
Inventor 姜明序姚立勇呼文韬杨亦桐孙强
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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