Aluminum-gallium-nitrogen-based ultraviolet LED epitaxial structure and ultraviolet LED lamp

Abstract

The invention relates to an aluminum-gallium-nitrogen-based ultraviolet LED epitaxial structure and an ultraviolet LED lamp. The aluminum-gallium-nitrogen-based ultraviolet LED epitaxial structure comprises a substrate, a buffer layer, a first aluminum-gallium-nitrogen layer, a light-emitting layer and a second aluminum-gallium-nitrogen layer which are sequentially arranged in a stacked mode. Thesecond aluminum-gallium-nitrogen layer comprises a plurality of second aluminum-gallium-nitrogen sub-layers which are sequentially stacked, the aluminum components of the plurality of second aluminum-gallium-nitrogen sub-layers are different, and the aluminum components of second aluminum-gallium-nitrogen sub-layers connected with the light-emitting layer are greater than that of other second aluminum-gallium-nitrogen sub-layers. An aluminum component of a second aluminum-gallium-nitrogen sub-layer close to the light-emitting layer is maximum, an aluminum component of a second aluminum-gallium-nitrogen sub-layer away from the light-emitting layer is minimum, a built-in electric field of the second aluminum-gallium-nitrogen layer is weakened by the second aluminum gallium nitride sub-layerswith different components such that the piezoelectric polarization effect between the second aluminum-gallium-nitrogen layer and the light-emitting layer is weakened, the effective injection rate ofholes is improved, the radiative recombination rate of electrons and the holes is improved, and the internal quantum rate and the light-emitting rate of the aluminum-gallium-nitrogen-based ultravioletLED epitaxial structure are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an aluminum gallium nitrogen-based ultraviolet LED epitaxial structure and an ultraviolet LED lamp. Background technique [0002] With the continuous development of light emitting diode (Light Emitting Diode, LED) technology, ultraviolet light emitting diodes are becoming more and more important in the commercial field, and have great application value. Moreover, compared with the traditional ultraviolet light source mercury lamp, ultraviolet LED has the advantages of super long life, no heat radiation, high energy, uniform irradiation, high efficiency, small size and no toxic substances, which makes ultraviolet LED the most likely Replace the traditional UV light source. Therefore, UV LEDs are receiving more and more attention from researchers. Among them, the luminous power of the ultraviolet LED is related to the internal quantum rate of the light emitted by the ultra...

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Problems solved by technology

[0003] However, due to the strong spontaneous and piezoelectric polarization between III-nitride materials, a strong polarization electric field is generated, which eventually leads to the leakage of electrons in the light-emitting layer, which reduces the radiative recombination efficiency of electrons and holes in the light-emitting layer. As a result, the internal quantum rate of the light emitted by the UV LED epitaxial wafer is low, which in turn causes the luminous power of the UV LED epitaxial wafer to be low.

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