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Two-dimensional material-based nano three-dimensional structure heterojunction, preparation method and application thereof

A technology of three-dimensional structure and two-dimensional materials, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve problems such as difficult preparation of nano-heterojunctions of two-dimensional materials, and achieve improved light absorption, Improve the effect of high reflectivity and control light absorption

Inactive Publication Date: 2019-12-20
ANYANG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current main preparation methods for heterojunctions of two-dimensional materials are dry transfer and chemical vapor deposition, etc., which are difficult to prepare nano-heterojunctions of two-dimensional materials with three-dimensional shapes.

Method used

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  • Two-dimensional material-based nano three-dimensional structure heterojunction, preparation method and application thereof

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Effect test

Embodiment 1

[0029] refer to figure 1 , the present invention comprises a layer of single-crystal silicon wafers with three-dimensional nanostructures on the surface, and HfO with a thickness of 10 nm is arranged on the single-crystal silicon wafers with three-dimensional nanostructures on the surface. 2 Thin film, as insulating layer; HfO 2 There is a layer of HfS with a thickness of 2.4nm on the film 2 thin film, HfS 2 The film is provided with a layer of MoS with a thickness of 3nm 2 film. In the present invention, the single crystal silicon wafer with a three-dimensional nanostructure on the surface is divided into a unit, b unit, c unit and d unit according to the area; a unit, b unit, c unit and d unit are arranged in sequence on the single crystal silicon wafer, each The width between the two units is 10 μm; each unit has the following characteristics:

[0030] unit a: the three-dimensional nanostructure in the area of ​​unit a is a periodic square well, the side length of the ...

Embodiment 2

[0044] refer to figure 1 , the present invention comprises a layer of single-crystal silicon wafers with three-dimensional nanostructures on the surface, and the single-crystal silicon wafers with three-dimensional nanostructures on the surface are provided with ZrO with a thickness of 20nm2 thin film, as an insulating layer; ZrO 2 The film is provided with a layer of ZrS with a thickness of 6nm 2 thin film, ZrS 2 A layer of WS with a thickness of 5nm is provided on the film 2 film. In the present invention, the single crystal silicon wafer with a three-dimensional nanostructure on the surface is divided into a unit, b unit, c unit and d unit according to the area; a unit, b unit, c unit and d unit are arranged in sequence on the single crystal silicon wafer, each The width between the two units is 10 μm; each unit has the following characteristics:

[0045] unit a: the three-dimensional nanostructure in the area of ​​unit a is a periodic square well, the side length of th...

Embodiment 3

[0059] refer to figure 1 , the present invention comprises a single crystal silicon chip with a three-dimensional nanostructure on the surface, and the single crystal silicon chip with a three-dimensional nanostructure on the surface is provided with a thickness of 30nm Hf 0.5 Zr 0.5 o 2 Thin film, as an insulating layer; Hf 0.5 Zr 0.5 o 2 The film is provided with a layer of ZrS with a thickness of 12nm 2 thin film, ZrS 2 The film is provided with a layer of MoS with a thickness of 10nm 2 film. In the present invention, the single crystal silicon wafer with a three-dimensional nanostructure on the surface is divided into a unit, b unit, c unit and d unit according to the area; a unit, b unit, c unit and d unit are arranged in sequence on the single crystal silicon wafer, each The width between the two units is 10 μm; each unit has the following characteristics:

[0060] unit a: the three-dimensional nanostructure in the area of ​​unit a is a periodic square well, the...

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Abstract

The invention discloses a two-dimensional material-based nano three-dimensional structure heterojunction, a preparation method and an application thereof. The nano three-dimensional structure heterojunction includes a monocrystalline silicon wafer with a three-dimensional nano-structure on its surface, a dielectric layer on the monocrystalline silicon wafer, and a heterojunction composed of two two-dimensional materials on the dielectric layer. The two-dimensional material-based nano three-dimensional structure heterojunction is mainly prepared by an atomic layer deposition process the shape retention characteristic of which can make the two-dimensional material heterojunction completely cover a substrate having a three-dimensional nanostructure to a very large area of a heterojunction region. In addition, the substrate with the three-dimensional nanostructure can effectively control the light absorption, so that the incident light is reflected multiple times in the three-dimensional nanostructure, which improves the absorbance and further improves the photoelectric conversion efficiency of the heterojunction.

Description

Technical field: [0001] The invention relates to the field of semiconductor heterojunctions, in particular to a nano-three-dimensional structure heterojunction based on two-dimensional materials, a preparation method and an application thereof. Background technique: [0002] In recent years, the development and application of new two-dimensional materials have attracted great attention. The family of 2D materials is vast, and their properties vary. A heterojunction based on two-dimensional materials is composed of a variety of two-dimensional materials or non-two-dimensional materials with different physical properties. The heterojunction based on two-dimensional materials integrates the advantages of multiple materials, learns from each other, overcomes the defects of a single material, and even exerts novel characteristics that the original materials do not have due to the unique coupling mechanism between materials. It is expected to be used in optoelectronics. A major ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/032H01L31/18H01L21/365
CPCH01L21/02381H01L21/0243H01L21/02565H01L21/02568H01L21/0262H01L31/02366H01L31/032H01L31/18Y02E10/50Y02P70/50
Inventor 张希威孟丹苏意文
Owner ANYANG NORMAL UNIV
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