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ZrS2/III-V group semiconductor nanowire array heterojunction, preparation method thereof and application thereof

A III-V, nanowire array technology, applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of insufficient light absorption and low photoelectric conversion efficiency, and achieve improved light absorption and photoelectric conversion Efficiency, the effect of realizing wide-angle absorption

Inactive Publication Date: 2019-12-24
ANYANG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention aims at the deficiencies of the prior art, and proposes a ZrS 2 / III-VI semiconductor nanowire array heterojunction, preparation method and application, aiming to overcome the insufficient light absorption and low photoelectric conversion efficiency of the existing heterojunction based on two-dimensional materials in the application process of optoelectronic devices problems, broadening the structure and types of heterojunctions based on 2D materials

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  • ZrS2/III-V group semiconductor nanowire array heterojunction, preparation method thereof and application thereof

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Embodiment 1

[0021] a ZrS 2 / GaN nanowire array heterogeneous, junction reference figure 1 , the invention comprises a layer of n-type doped GaN substrate, GaN nanowires with an array structure are vertically grown on the GaN substrate, and continuous ZrS is deposited on the surface of the GaN substrate and the GaN nanowire array structure 2 film. In this embodiment, the thickness of the 2-inch GaN substrate is 200 μm, and the carrier concentration is 5×10 16 cm -3 ; The GaN nanowire diameter is 200nm, the height is 3μm, and the period of the GaN nanowire array is 0.5μm. ZrS deposited by atomic layer deposition process 2 The thickness of the film is 2.4nm, and the ZrS 2 The thin film uniformly spreads on the surface of the GaN substrate and the GaN nanowire array.

[0022] The preparation method of the heterojunction in this embodiment is as follows:

[0023] 1) Ultrasonic cleaning of the GaN substrate with alcohol, acetone, and deionized water;

[0024] 2) Using epitaxy to grow Ga...

Embodiment 2

[0028] a ZrS 2 / InAs nanowire array heterogeneous, junction reference figure 1 , the present invention comprises a layer of n-type doped InAs substrate, InAs nanowires of array structure are vertically grown on the InAs substrate, continuous ZrS is deposited on the surface of InAs substrate and InAs nanowire array structure 2 film. In this embodiment, the thickness of the 2-inch InAs substrate is 300 μm, and the carrier concentration is 3×10 18 cm -3 ; The diameter of the InAs nanowire is 500nm, the height is 10μm, and the period of the InAs nanowire array is 2μm. ZrS deposited by atomic layer deposition process 2 The thickness of the film is 6nm, and the ZrS 2 The film evenly covers the InAs substrate and the surface of the InAs nanowire array.

[0029] The preparation method of the heterojunction in this embodiment is as follows:

[0030] 1) Ultrasonic cleaning of the InAs substrate with alcohol, acetone, and deionized water;

[0031] 2) growing InAs nanowire arrays ...

Embodiment 3

[0035] a ZrS 2 / GaAs nanowire array heterogeneous, junction reference figure 1 , the present invention comprises a layer of n-type doped GaAs substrate, GaAs nanowires with an array structure are vertically grown on the GaAs substrate, and continuous ZrS is deposited on the surface of the GaAs substrate and the GaAs nanowire array structure 2 film. In this embodiment, the thickness of the 2-inch GaAs substrate is 350 μm, and the carrier concentration is 7×10 17 cm -3 ; The GaAs nanowire diameter is 500nm, the height is 50μm, and the period of the GaAs nanowire array is 5μm. ZrS deposited by atomic layer deposition process 2 The thickness of the film is 36nm, and the ZrS 2 The thin film uniformly spreads on the surface of the GaAs substrate and the GaAs nanowire array.

[0036] The preparation method of the heterojunction in this embodiment is as follows:

[0037] 1) Ultrasonic cleaning of the GaAs substrate with alcohol, acetone, and deionized water;

[0038] 2) GaAs n...

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Abstract

The invention discloses a ZrS2 / III-V group semiconductor nanowire array heterojunction, a preparation method thereof and an application thereof. The ZrS2 / III-V group semiconductor nanowire array heterojunction comprises a layer of n-type III-VI group semiconductor substrate which is provided with a nanowire array structure made of the same material, and a layer of ZrS2 film prepared by an atomic layer deposition process is set on the surfaces of the III-VI group semiconductor substrate and the nanowire array. Since the heterojunction in the invention is formed by combining the novel two-dimensional semiconductor ZrS2 and the semiconductor substrate with a three-dimensional nano structure on a surface, the advantages of the novel two-dimensional material can be exerted, and the effects of regulating and controlling the light absorption wavelength and enhancing the light absorption can be achieved. The atomic layer deposition process can enable the ZrS2 film to be completely paved on thesurfaces of the substrate and the nanowire array to realize comprehensive contact, so that the area of a prepared heterojunction region is large, and the photoelectric conversion efficiency of an optoelectronic device is further improved.

Description

Technical field: [0001] The invention relates to the field of semiconductor heterojunctions, in particular to a ZrS 2 / III-VI semiconductor nanowire array heterojunction, preparation method and application. Background technique: [0002] In recent years, the development and application of new two-dimensional materials have attracted great attention. The family of 2D materials is vast, and their properties vary. A heterojunction based on two-dimensional materials is composed of a variety of two-dimensional materials or non-two-dimensional materials with different physical properties. The heterojunction based on two-dimensional materials integrates the advantages of multiple materials, learns from each other, overcomes the defects of a single material, and even exerts novel characteristics that the original materials do not have due to the unique coupling mechanism between materials. It is expected to be used in optoelectronics. A major breakthrough has been made in the fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0336H01L31/072H01L31/109H01L31/18
CPCH01L31/0336H01L31/072H01L31/109H01L31/18Y02E10/50Y02P70/50
Inventor 张希威孟丹胡丹
Owner ANYANG NORMAL UNIV
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