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Growth method of high-quality and large-size silicon carbide (SiC) crystal

A technology of crystal growth and silicon carbide, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of seed crystal ablation, plane hexagonal cavity, etc., to ensure full utilization, avoid seed crystal ablation, quality high effect

Active Publication Date: 2019-12-20
BEIJING TIANKE HEDA SEMICON CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the problems of planar hexagonal voids caused by seed crystal ablation in the early stage of growth, the present invention provides a high-quality silicon carbide crystal growth method

Method used

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  • Growth method of high-quality and large-size silicon carbide (SiC) crystal
  • Growth method of high-quality and large-size silicon carbide (SiC) crystal
  • Growth method of high-quality and large-size silicon carbide (SiC) crystal

Examples

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Effect test

example 1

[0032] A piece of 4H-SiC seed crystal is used, and the C surface is used as the crystal growth surface, and it is bonded to the graphite crucible cover. The bottom of the crucible is filled with enough SiC powder raw materials, and then the crucible lid with the seed crystals is placed on the top of the crucible, and after assembly, it is placed in the single crystal growth furnace. Push the crucible up 20mm at a speed of 8mm / h, evacuate the single crystal furnace until the pressure is less than 10Pa, and perform the following processes in sequence: (1) Inflate the growth furnace with a mixture of argon and nitrogen until the pressure reaches 30kPa, Keep the pressure constant, use medium-frequency induction heating to increase the temperature, set the temperature of the raw material to 2200-2300℃, keep it for 3h after the temperature is reached, and then keep the temperature in the furnace unchanged; (2) Reduce the pressure through the growth furnace pressure control system Red...

example 2

[0034] A piece of 4H-SiC seed crystal is used, and the C surface is used as the crystal growth surface, and it is bonded to the graphite crucible cover. The bottom of the crucible is filled with enough SiC powder raw materials, and then the crucible lid with the seed crystals is placed on the top of the crucible, and after assembly, it is placed in the single crystal growth furnace. Push the crucible up by 30mm at a speed of 10mm / h, evacuate the single crystal furnace until the pressure is less than 10Pa, and then perform the following processes in sequence: (1) Inflate the growth furnace with a mixture of argon and nitrogen until the pressure reaches 40kPa, Keep the pressure constant, use medium frequency induction heating to heat up, set the temperature of the raw material to 2100-2200℃, keep it for 5h after the temperature is reached, and then keep the temperature in the furnace unchanged; (2) Through the growth furnace pressure control system, the pressure Decrease to 800Pa...

example 3

[0036] A piece of 4H-SiC seed crystal is used, and the C surface is used as the crystal growth surface, and it is bonded to the graphite crucible cover. The bottom of the crucible is filled with enough SiC powder raw materials, and then the crucible lid with the seed crystals is placed on the top of the crucible, and after assembly, it is placed in the single crystal growth furnace. Push the crucible up 40mm at a speed of 12mm / h, evacuate the single crystal furnace until the pressure is less than 10Pa, and then proceed as follows: (1) Inflate the growth furnace with a mixture of argon and nitrogen until the pressure reaches 60kPa, Keep the pressure constant, use medium-frequency induction heating to increase the temperature, set the temperature of the raw material to 2200-2300℃, keep it for 6h after the temperature is reached, and then keep the temperature in the furnace unchanged; (2) Through the growth furnace pressure control system, the pressure Decrease to 1000Pa and keep ...

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Abstract

The invention provides a growth method of a high-quality and large-size silicon carbide (SiC) crystal. The growth method aims to improve the quality of the grown SiC crystal and eliminate a plane hexagonal cavity defect. The growth method comprises the following steps: a crucible loaded with a SiC raw material and a seed crystal is placed in a single-crystal growth furnace, the quick upward-pushing distance range of the crucible is 5-50 mm, the seed crystal gets away from a high temperature area, the crucible slowly descends after reaching certain temperature and pressure conditions, the descending distance is consistent with the upward-pushing distance of the crucible, then under the certain temperature and pressure conditions, the SiC raw material is sublimated and crystallized on the seed crystal, the crystal is cooled, and the SiC single crystal is obtained. The growth method has the advantages that in the initial stage of crystal growth, the seed crystal gets away from the high temperature area, seed crystal ablation caused by the high temperature is eliminated, and thus the plane hexagonal cavity defect is eliminated; and meanwhile full utilization of the SiC raw material isguaranteed, and the high-quality and large-size SiC crystal is obtained.

Description

Technical field [0001] The invention belongs to the field of silicon carbide crystal growth, and specifically relates to a high-quality large-size silicon carbide crystal growth method. Background technique [0002] As a third-generation semiconductor material, silicon carbide has excellent physical and chemical properties, and has a wide range of applications in high-end optoelectronics, high-power, and microwave radio frequency fields. [0003] At present, the most mature and effective way to grow silicon carbide crystals is the physical vapor transport method (Journal of crystal growth 43(1978) 209-212). The basic principle of the physical vapor transport method is to place the silicon carbide raw material in a crucible and The seed crystal is fixed on the top of the upper lid of the crucible, and the raw material is sublimated under high temperature and low pressure. The sublimated gas uses the temperature gradient provided by the crystal growth thermal field as the power for m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/00C30B29/36
Inventor 刘春俊姚静彭同华赵宁王波杨建
Owner BEIJING TIANKE HEDA SEMICON CO LTD
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