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A kind of preparation method of quasi-single crystal perovskite thin film

A perovskite, quasi-single crystal technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as surface and grain boundary defects, reduce defect density, avoid surface and grain boundary defects, The effect of simple operation

Active Publication Date: 2021-08-13
杨冠军
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a kind of preparation method of quasi-single-crystal perovskite thin film, prepare quasi-single-crystal perovskite thin-film by hot-pressing method, to solve present preparation technology in the preparation process of quasi-crystal perovskite due to from perovskite The technical problem of surface and grain boundary defects caused by organic cations or halide anions escaping from the mine; the method of the invention has the advantages of simple operation and easy large-scale production

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  • A kind of preparation method of quasi-single crystal perovskite thin film
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  • A kind of preparation method of quasi-single crystal perovskite thin film

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Embodiment approach

[0033] A kind of preparation method of quasi-single crystal perovskite film of the present invention comprises the following steps:

[0034] Step 1, preparing small-grain perovskite ABX with a grain size less than or equal to 300nm on the surface of the substrate 3 film;

[0035] Step 2, transfer the substrate containing the small-grain perovskite ABX3 film prepared in step 1 to a closed device containing a saturated atmosphere of AX, and heat it to a temperature of 50-400°C for 5-90min; the saturation of AX at this temperature The steam supports the perovskite film to maintain a stable perovskite without decomposing into substances that are difficult to move at the grain boundary. During this holding period, the perovskite grains grow rapidly under the action of diffusion, and a quasi-single crystal perovskite is prepared. mine film. The lateral size of grains in the prepared quasi-single crystal perovskite film exceeds 5 times of the film thickness.

[0036] The method fo...

Embodiment 1

[0044] A method for preparing a quasi-single crystal perovskite film, comprising the following steps:

[0045] Step 1. Spin-coat 1mol / L MAPbI at 3500rad on the FTO substrate 3 (Methylamine lead iodide) precursor; small-grain MAPbI prepared by pumping method 3 film;

[0046] Step 2, the small grain MAPbI 3 The film was placed in a closed saturation device of MAI, and then heated at 150°C for 10 minutes; a quasi-single crystal perovskite film was obtained; the scanning electron microscope was used to test and record the cross-sectional morphology of the quasi-single crystal perovskite film, as shown in image 3 As shown, it can be seen that the perovskite grains are relatively large, with an average grain size of 1.55 μm.

Embodiment 2

[0048] A method for preparing a quasi-single crystal perovskite film, comprising the following steps:

[0049] Step 1. Spin-coat 1mol / L MAPbI at 3000rad on the FTO substrate 2.8 Cl 0.2 (methylammonium iodide lead chloride) precursor; preparation of small-grain MAPbI by pumping method 2.8 Cl 0.2 film;

[0050] Step 2. Put the thin film under the airtight device of MAI; then heat at 150° C. for 10 min to obtain the quasi-single crystal perovskite thin film. Scanning electron microscopy test and record the cross-sectional morphology of the quasi-single crystal perovskite film, such as image 3 As shown, it can be seen that the perovskite grains are very large, with an average grain size of 4.04 μm.

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Abstract

The invention discloses a method for preparing a quasi-single-crystal perovskite film, comprising: step 1, preparing a small-grain perovskite ABX3 film with a grain size less than or equal to 300 nm on the surface of a substrate; step 2, comprising step 1 The prepared small-grain perovskite ABX3 film substrate is transferred to a closed device containing a saturated atmosphere of AX, heated to a temperature of 50-400°C and kept for 5-90min; Rapid growth occurs under the condition of the quasi-single crystal perovskite thin film. In the present invention, the prepared small-grain perovskite film is placed in a closed environment containing the saturated vapor pressure of AX, so that the perovskite film is dissolved and crystallized into a quasi-single crystal perovskite film in the saturated vapor of AX, greatly reducing the Defects are eliminated, and the defect density is reduced. Moreover, surface and grain boundary defects caused by organic cations or halide anions escaping from perovskite during the preparation of quasicrystalline perovskite are avoided.

Description

technical field [0001] The invention belongs to the technical field of film preparation, in particular to a method for a quasi-single crystal perovskite film. Background technique [0002] With energy depletion and environmental pollution becoming more and more serious, the utilization of clean energy such as solar cells is a historical development trend, and it is also a current research hotspot. In recent years, organic-inorganic hybrid perovskite thin films have attracted widespread attention due to their excellent carrier transport properties, suitable and adjustable bandgap width, and high absorption coefficient. The solar cell prepared by using the material as a light absorbing layer has low cost because it can be prepared in a solution. Moreover, the efficiency of this type of battery was first found to achieve an efficiency of 3.9% in 2009, and has since achieved rapid development and has now reached an efficiency of 20%. [0003] However, in order to obtain high-p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/48H01L51/42
CPCH10K71/12H10K30/00Y02E10/549
Inventor 杨冠军楚倩倩丁斌李长久李成新
Owner 杨冠军
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