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Broadband tunable terahertz absorber based on vanadium dioxide and preparation method thereof

A vanadium dioxide and absorber technology, applied in the terahertz field, can solve problems such as narrow bandwidth, small tuning degree, and slow tuning speed, and achieve the effects of fast tuning speed, large tuning depth, and simple structure

Inactive Publication Date: 2019-11-08
TIANJIN POLYTECHNIC UNIV
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Problems solved by technology

However, at present, terahertz metamaterial absorbers still have shortcomings such as small tuning degree, slow tuning speed, and narrow bandwidth. Therefore, the present invention proposes a vanadium dioxide-based broadband tunable terahertz absorber and its preparation method

Method used

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  • Broadband tunable terahertz absorber based on vanadium dioxide and preparation method thereof
  • Broadband tunable terahertz absorber based on vanadium dioxide and preparation method thereof
  • Broadband tunable terahertz absorber based on vanadium dioxide and preparation method thereof

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Embodiment Construction

[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, and are not intended to limit the present invention:

[0024] refer to figure 1 , figure 2 and image 3 , the invention discloses a vanadium dioxide-based broadband tunable terahertz absorber and a preparation method thereof. The cross-section of the terahertz absorber unit is square, and it is composed of a base layer 1, a composite structure layer 2, a dielectric layer 3, and a metal structure layer 4 from bottom to top, wherein the composite structure layer 2 is composed of an embedded phase The material layer is composed of the medium layer of the frame structure 5, and the metal structure layer is composed of metal squares 8 a...

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Abstract

The invention discloses a broadband tunable terahertz absorber based on vanadium dioxide and a preparation method thereof. The broadband tunable terahertz absorber unit section area is a square, and the broadband tunable terahertz absorber is composed of a base layer, a composite structure layer, a dielectric layer and a metal structure layer in order form bottom to top. The composite structure layer is formed by the dielectric layer inlaying a phase change material square structure, and the metal structure layer is formed by nesting a metal square frame and a metal block. The resonance structure is adopted to perform spatial overlapping in the longitudinal direction to achieve the broadband absorption of the terahertz waves, and the electrical conductivity of the phase change material inthe composite structural layer can be changed by external excitation such as a temperature and the illumination, and the absorption efficiency of the terahertz waves is modulated.

Description

technical field [0001] The invention relates to the field of terahertz technology, in particular to a vanadium dioxide-based broadband tunable terahertz absorber and a preparation method thereof. Background technique [0002] Terahertz waves refer to electromagnetic waves between microwave and infrared, with a frequency range of 0.1THz-10THz. Since terahertz waves are in a special spectral range, they have many superior properties. The study found that it has important application prospects in wireless communication, radar imaging, and environmental detection. Compared with terahertz radiation source and detection technology, the research on terahertz functional devices is relatively lagging behind, such as modulators, polarizers and couplers, especially absorbers. The reason is that there is a lack of natural and suitable terahertz strong absorbing materials in nature, which hinders and restricts the development and application of terahertz devices. [0003] The emergenc...

Claims

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Application Information

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IPC IPC(8): H01Q17/00H05K9/00
CPCH01Q17/007H05K9/0081H05K9/0084
Inventor 白晋军张曙升范飞王莎莎孙晓东苗银萍常胜江
Owner TIANJIN POLYTECHNIC UNIV
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