A Single Event Burnout Resistant Structure for Power Semiconductor Devices

Abstract

The invention discloses an anti-single event burning structure suitable for power semiconductor devices, which includes an epitaxial layer, an active region and a gate structure are arranged on the first main surface of the epitaxial layer, and the active region and the gate structure are A gate metal layer is provided; a substrate layer is provided on the second main surface of the epitaxial layer, and a drain metal layer is provided on the substrate layer; the epitaxial layer between the active region and the substrate layer forms a drift region ; The active region is provided with a vertical deep trench, and a source metal layer is provided in the deep trench; a P-type region is provided at the bottom of the source metal layer; the present invention is caused by heavy ions when the device is turned off. The transient current is mainly discharged through the deep trench electrode, which greatly reduces the transient current acting on the parasitic BJT, making it difficult for the parasitic BJT to conduct, thereby effectively improving the anti-SEB performance of the power semiconductor device; and the deep trench electrode The introduction of will not have any impact on the device channel region and reverse withstand voltage region, so the basic electrical characteristics of the device will not be affected in any way.

Description

technical field [0001] The invention relates to the anti-radiation strengthening technology of power semiconductor devices, in particular to an anti-single event burning structure suitable for power semiconductor devices. Background technique [0002] Power semiconductor devices have the advantages of large driving current, high breakdown voltage, fast speed, low power consumption, and large output power. They can realize power control and conversion in different ranges, and are widely used in power management of satellites and spacecraft. The field of application has enormous potential for development. Power semiconductor devices usually have the characteristics of small size and high operating voltage, and their working stability is easily affected by the natural radiation environment in space, especially the single event burnout (SEB) effect. SEB is usually induced by the radiation of heavy ions, which can generate a very high concentration of electron-hole pairs along t...

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Problems solved by technology

[0004] In order to overcome the deficiency that the existing semiconductor power device SEB reinforcement technology cannot guarantee the basic electrical characteristics of the device, the present invention provides an anti-single event burnout structure suitable for power semiconductor devices to solve the above-mentioned existing problems in the prior art. Under the premise of ensuring the basic electrical characteristics of semiconductor power devices, effectively improve the anti-SEB performance of the device

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