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Saturation method of graphite frame and graphite frame

A technology of graphite frame and passivation film, applied in the field of solar cells, can solve the problems of easy occurrence of red edges and affect the passivation effect of silicon wafers, and achieve the effects of prolonging the cleaning cycle, improving the passivation effect and reducing the manufacturing cost.

Active Publication Date: 2019-11-01
JA SOLAR
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  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, after the saturation treatment of the graphite frame, the passivated silicon wafer obtained by placing the silicon wafer in the graphite frame and passivating the silicon wafer is prone to red edges, which affects the passivation effect of the silicon wafer.

Method used

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  • Saturation method of graphite frame and graphite frame
  • Saturation method of graphite frame and graphite frame
  • Saturation method of graphite frame and graphite frame

Examples

Experimental program
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Effect test

Embodiment 1

[0050] (1) Take the old graphite frame 10, and use 5% to 15% hydrofluoric acid to clean the graphite frame 10 for 8 hours to remove the silicon nitride passivation layer deposited on the surface of the graphite frame 10;

[0051] (2) Use pure water to rinse the graphite frame 10 after removing the passivation layer for 0.5 hours;

[0052] (3) Use pure water to soak the graphite frame 10 for 4 hours;

[0053] (4) Use an oven to dry the graphite frame 10 for the first time at a temperature of 150°C to 200°C for 6 hours;

[0054] (5) Carry out a second drying treatment on the graphite frame 10 in the plate plasma enhanced chemical vapor deposition equipment, the temperature of the drying treatment is 400-450°C, and the drying treatment time is 1h;

[0055] (6) After drying the graphite frame 10 for the second time in the plasma-enhanced chemical vapor deposition equipment, feed ammonia and silane, turn on the radio frequency power supply, and deposit a silicon nitride passivatio...

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Abstract

The invention relates to a saturation method of a graphite frame and the graphite frame. The saturation method of the graphite frame comprises the following steps: step S1, removing impurities on thesurface of the graphite frame (10) and washing with water; step S2, carrying out first drying treatment on the graphite frame, wherein the temperature of the drying treatment is 150-200 DEG C; step S3, performing secondary drying treatment on the graphite frame, wherein the temperature of the drying treatment is 400-450 DEG C; and step S4, arranging a passive film layer on the surface of the graphite frame. The graphite frame prepared through the saturation method of the graphite frame is used for passivating silicon wafers. The number of the silicon wafers with abnormal appearances is greatlyreduced. The passivation effect of the silicon wafers is improved, and the saturation time of the graphite frame is shortened through the saturation method.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a graphite frame saturation method and the graphite frame. Background technique [0002] At present, after the saturation treatment of the graphite frame, the passivation of the silicon wafer obtained by placing the silicon wafer in the graphite frame tends to have red edges around the periphery of the passivated silicon wafer, which affects the passivation effect of the silicon wafer. Contents of the invention [0003] In order to solve the above-mentioned technical problems, an object of the present invention is to provide a method for saturating a graphite frame. The graphite frame prepared by the saturation method is used to passivate silicon wafers, which greatly reduces the risk of silicon wafers with abnormal appearance. Quantity, the passivation effect of the silicon wafer is improved, and the saturation method shortens the saturation time of the graphite frame. ...

Claims

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Application Information

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IPC IPC(8): H01L21/673H01L31/18
CPCH01L21/673H01L31/1804Y02P70/50
Inventor 赵环王玉肖王贵梅
Owner JA SOLAR
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