Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for predicting performance of nano diameter rare earth vacancy color center

A technology of nano-diamond and prediction method, applied in the field of prediction of the performance of nano-diamond rare earth vacancy color center, can solve the problem of less research on single-photon sources, and achieve the effects of saving manpower, accurate results and high efficiency

Pending Publication Date: 2019-11-01
INNER MONGOLIA UNIV OF SCI & TECH
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are relatively few studies on the preparation of single photon sources in my country.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for predicting performance of nano diameter rare earth vacancy color center
  • Method for predicting performance of nano diameter rare earth vacancy color center
  • Method for predicting performance of nano diameter rare earth vacancy color center

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0026] The method for predicting the performance of a nano-diamond rare earth vacancy color center of the present invention comprises the following steps in sequence: constructing a model, theoretically calculating, analyzing a result and drawing a conclusion. The steps are as follows: building a model: firstly, according to the bond length difference between the doped rare earth element and the carbon atom in diamond, judging the possible structural configuration; theoretical calculation: then calculating the crystal binding ener...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for predicting performance of a nano diameter rare earth vacancy color center. The method comprises the following successive steps of constructing a model, performingtheoretical calculation, analyzing a result and obtaining a conclusion. The method for predicting the performance of the nano diameter rare earth vacancy color center realizes high calculation speedand high result accuracy. Not only can an experiment result be verified and analyzed, but also direct theoretical guidance can be supplied for laboratory preparation of the nano diameter rare earth vacancy color center. The method does not require a large number of experiment materials and instruments and has advantages of low cost, high efficiency and no pollution. The method saves manpower, material resource and financial resource. The method can facilitate researching of a single-photon source and lays a basis for researching in a quantum information field. The rare earth element has a unique light emitting advantage as an optical material. The method combines the application of the advantages in the nano diamond color center and predicts excellent property in the nano diamond color center.

Description

technical field [0001] The invention belongs to the technical field of micro-nano optoelectronic devices and photonic device engineering, and in particular relates to a method for predicting the properties of nano-diamond rare earth vacancy color centers. Background technique [0002] Single photon source is an important foundation of quantum information technology (quantum communication, quantum computing). In recent years, my country's quantum communication technology has developed rapidly. The first commercial quantum communication trunk line (Hangzhou-Shanghai) has been put into operation. However, there are relatively few studies on the preparation of single photon sources in my country. The single photon sources used by many quantum communication technology and single photon source performance research groups in my country come from abroad. Therefore, for the smooth development of quantum information technology in our country, we should vigorously strengthen the res...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G16C60/00
CPCG16C60/00
Inventor 谭心刘志鑫刘智宇
Owner INNER MONGOLIA UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com