Image element structure capable of improving frame transfer CCD response

Abstract

The present invention belongs to the field of photoelectric detection and imaging, and especially relates to an image element structure capable of improving frame transfer CCD response. The image element structure comprises a substrate, a plurality of parallel vertical transfer electrodes, A CCD buried-channel region, a protection ring and a channel resistor; a p-type signal amplification region and an n-type signal amplification region are arranged in order between the substrate and the CCD buried-channel region; the vertical transfer electrodes are connected with the upper portion of the CCDburied-channel region, one side of each vertical transfer electrode is connected with a signal amplification control electrode through a dielectric layer; and the protection ring and the channel resistor are arranged respectively at the positions from left and right sides of the top portion of the substrate until the CCD buried-channel region. The image element structure capable of improving frame transfer CCD response can change the photosensitive responsivity of the CCD image element in real time by changing the injection concentration of the signal amplification structure and the applied voltage so as to allow the CCD to more flexibly select the signal amplification capacity at different light intensities of incident light and improve the imaging detection adaptation of the CCD for different light intensity environments.

Description

technical field [0001] The invention belongs to the field of photoelectric detection and imaging, and in particular relates to a pixel structure capable of improving the responsivity of a frame transfer CCD. Background technique [0002] The charge-coupled device CCD that works in the frame transfer (Frame transfer, FT for short) mode is the simplest in structure and the easiest to manufacture. The frame transfer CCD was considered to be a very good CCD structure in the early years. Although its size is twice that of its photosensitive area, its performance has been improved in many ways compared with the photoelectric camera tube. [0003] At present, the main means to improve the responsivity of frame shift CCD is to reduce the noise of the device and improve the quantum efficiency of the device. In terms of noise reduction, under the conditions of specific operating frequency and operating temperature, the current noise level of CCD has been reduced to less than 5 electr...

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Problems solved by technology

[0004] Therefore, the existing device structure and technology have basically reached the response sensitivity limit of the frame transfer CCD. If you want to further improve the responsivity of the device, you must adopt new technology or / and device structure

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