A method for suppressing the formation of carbon inclusion defects in the growth of conductive silicon carbide crystals

A technology of crystal growth and silicon carbide, which is applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as carbon inclusions, avoid the formation of carbon inclusions, reduce the excess of C sources, and inhibit The effect produced

Active Publication Date: 2021-07-13
HEBEI POSHING ELECTRONICS TECH
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the problem that carbon inclusions are prone to appear in the existing PTV method for growing silicon carbide single crystals, the present invention provides a method for inhibiting the generation of carbon inclusion defects in the growth of conductive silicon carbide crystals

Method used

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  • A method for suppressing the formation of carbon inclusion defects in the growth of conductive silicon carbide crystals
  • A method for suppressing the formation of carbon inclusion defects in the growth of conductive silicon carbide crystals
  • A method for suppressing the formation of carbon inclusion defects in the growth of conductive silicon carbide crystals

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Embodiment 1

[0037] A method for suppressing the generation of carbon inclusion defects in the growth of conductive silicon carbide crystals:

[0038] Step a, mixing carbon powder and silicon powder evenly according to the molar ratio of 1:1, the purity of both is ≥5N, and the particle size is <100 μm;

[0039] Step b, put uniformly mixed carbon powder and silicon powder into a high-purity graphite crucible, place the graphite crucible in an induction-heated synthesis furnace, evacuate to a pressure <1E-5Torr, discharge the air from the reaction chamber, and heat To 1100°C, feed a mixed gas of high-purity argon and nitrogen into the reaction chamber until the pressure is 10Torr, the volume content of nitrogen in the reaction chamber is 4%, gradually increase the temperature to 2100°C at a rate of 100°C / h, and react for 12 hours , feed protective gas to a pressure of 600 Torr, cool down, and obtain nitrogen-containing silicon carbide powder;

[0040] Step c, to put the nitrogen-containing ...

Embodiment 2

[0042] A method for suppressing the generation of carbon inclusion defects in the growth of conductive silicon carbide crystals:

[0043] Step a, mixing carbon powder and silicon powder evenly according to the molar ratio of 1:1.01, the purity of both is ≥5N, and the particle size is <100 μm;

[0044] Step b, put uniformly mixed carbon powder and silicon powder into a high-purity graphite crucible, place the graphite crucible in an induction-heated synthesis furnace, evacuate to a pressure <1E-5Torr, discharge the air from the reaction chamber, and heat To 1000°C, feed a mixed gas of high-purity argon and nitrogen into the reaction chamber until the pressure is 1Torr, the volume content of nitrogen in the reaction chamber is 3%, gradually increase the temperature to 2000°C at a rate of 90°C / h, and react for 10h , feed protective gas to a pressure of 500 Torr, lower the temperature, and obtain nitrogen-containing silicon carbide powder;

[0045] Step c, to put the nitrogen-con...

Embodiment 3

[0047] A method for suppressing the generation of carbon inclusion defects in the growth of conductive silicon carbide crystals:

[0048] Step a, mixing carbon powder and silicon powder evenly according to the molar ratio of 1:1.02, the purity of both is ≥5N, and the particle size is <100 μm;

[0049] Step b, put uniformly mixed carbon powder and silicon powder into a high-purity graphite crucible, place the graphite crucible in an induction-heated synthesis furnace, evacuate to a pressure <1E-5Torr, discharge the air from the reaction chamber, and heat To 1050°C, feed a mixture of high-purity argon and nitrogen into the reaction chamber until the pressure is 20 Torr, the volume content of nitrogen in the reaction chamber is 6%, gradually increase the temperature to 2200°C at a rate of 120°C / h, and react for 15 hours , feed protective gas to a pressure of 400 Torr, cool down, and obtain nitrogen-containing silicon carbide powder;

[0050] Step c, to put the nitrogen-containin...

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Abstract

The invention discloses a method for suppressing the formation of carbon inclusion defects in the growth of conductive silicon carbide crystals. It uses carbon powder, silicon powder and nitrogen as raw materials to synthesize nitrogen-containing silicon carbide powder, and then uses the nitrogen-containing silicon carbide powder as raw material to grow silicon carbide single crystals to obtain silicon carbide crystals. The invention uses nitrogen-containing silicon carbide powder to grow silicon carbide crystals, which can make nitrogen doping more evenly distributed in the gas phase components, so that the resistivity uniformity in the wafer is better, and solves the problem that nitrogen gas cannot permeate due to nitrogen gas being introduced from the outside. Uniformity, resulting in poor uniformity of N doping concentration in the wafer, which in turn leads to poor uniformity of wafer resistivity. Therefore, the method for suppressing carbon inclusion defects in conductive silicon carbide crystals provided by the present invention is suitable for growing conductive silicon carbide crystals, especially suitable for preparing large-diameter conductive silicon carbide crystals, and has broad market application prospects.

Description

technical field [0001] The invention relates to the technical field of crystal growth, in particular to a method for suppressing the generation of carbon inclusion defects in the growth of conductive silicon carbide crystals. Background technique [0002] As the most mature wide-bandgap semiconductor material at present, silicon carbide has the advantages of high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy. Its excellent performance can meet the requirements of modern electronic technology for high temperature, high frequency, Various requirements for high power and radiation resistance, so it is widely used in power electronics, radio frequency devices, optoelectronic devices and other fields. The physical vapor transport (Physical vapor transport, PVT) method is the mainstream production method in the silicon carbide single crystal industry, and it is also the most successful method for growing large-diam...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/02C30B29/36
CPCC30B23/002C30B23/02C30B29/36
Inventor 吴会旺赵丽霞陈秉克刘英斌李胜华
Owner HEBEI POSHING ELECTRONICS TECH
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