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Preparation method of RF-MEMS switch composite sacrificial layer

A technology of RF-MEMS and composite sacrificial layer, which is applied in the direction of coating, manufacturing microstructure devices, metal material coating technology, etc. It is difficult to solve the problem of equality, achieve the effect of excellent flatness, avoid mechanochemical polishing process, and have little dependence

Pending Publication Date: 2019-10-15
NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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Problems solved by technology

[0004] At present, the sacrificial layer technology commonly used is difficult to make thin, which makes it difficult to control the consistency of the contact height of the switch beam. In addition, affected by the fluctuation of the base metal line, it is difficult to make the sacrificial layer flat, which in turn affects the voltage, reliability, and consistency of the switch. sex

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  • Preparation method of RF-MEMS switch composite sacrificial layer

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Embodiment Construction

[0022] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0023] A method for preparing a RF-MEMS switch composite sacrificial layer, comprising the following steps:

[0024] (1) Sputter a metal layer on the surface of the MEMS substrate that needs to be a sacrificial layer, and pattern the metal layer, so as to realize the planar filling of the MEMS substrate;

[0025] (2) Deposit a metal layer by sputtering again on the MEMS substrate after step (1) flattening and filling, so as to prepare the first sacrificial layer, and the height of the first sacrificial layer is used to define the gap distance of the switch beam contacts;

[0026] (3) Take out the MEMS substrate sputtered in step (2), perform photolithography and etch to remove the glue, and remove the metal layer in the anchor area of ​​the metal beam;

[0027] (4) Thin-resist lithography is performed on the MEMS substrate etched and removed i...

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Abstract

The invention discloses a preparation method of an RF-MEMS switch composite sacrificial layer, and belongs to the RF-MEMS device manufacturing technology field. The method comprises the steps of planarization filling, sputtering etching of a metal sacrificial layer, preparation of a photoresist sacrificial layer and the like. By adopting the method disclosed by the invention, the flatness of the MEMS switch beam can be improved, and the preparation of the switch beam with the low contact distance of 10-500nm is realized, so that the reliability of the MEMS switch is improved, and the driving voltage of the MEMS switch is reduced.

Description

technical field [0001] The invention relates to the technical field of RF-MEMS device manufacturing, in particular to a method for preparing a composite sacrificial layer of an RF-MEMS switch. Background technique [0002] RF-MEMS (RF is Radio Frequency, radio frequency; MEMS is Micro-Electro-MechanicalSystem, micro-electromechanical system) switches are widely used in communications, radar, etc. due to their advantages such as low loss, high isolation, integration, and miniaturization. In the military field and civilian fields such as miniature tunable antennas. [0003] The preparation process of the sacrificial layer is an extremely important step in the preparation process of the RF-MEMS switch. The height accuracy, flatness and contact height of the switch beam of the RF-MEMS switch are mainly affected by the preparation process of the sacrificial layer. [0004] At present, the sacrificial layer technology commonly used is difficult to make thin, which makes it diffic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
CPCB81C1/00468B81C2201/0107
Inventor 徐亚新梁广华赵飞庄治学魏浩陈雨龚孟磊
Owner NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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