Defect detection method of metal silicide and formation method of semiconductor structure

Abstract

The invention provides a defect detection method of a metal silicide and a formation method of a semiconductor structure. The defect detection method comprises the following steps: providing a substrate and a metal silicide layer with which a part of the substrate is covered; then forming a dielectric layer on the substrate, wherein the substrate and the metal silicide layer are covered with the dielectric layer and the surface of the metal silicide layer is exposed so that the areas except the metal silicide layer are insulated respectively; then, bombarding the metal silicide layer with an electron beam, and obtaining the defect condition of the metal silicide layer according to the concentration distribution of secondary electrons escaped from the metal silicide layer. Therefore, quantitative detection can be carried out on the defects of the metal silicide layer, the defect detection precision is improved, moreover, the defect detection method of the metal silicide is carried out in the formation process of the semiconductor structure, the defect condition of the metal silicide can be reflected in real time online, normal preparation process of the semiconductor device cannot be disturbed, an extra working procedure cannot be added, and the detection cost and time can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a method for detecting defects of a metal silicide and a method for forming a semiconductor structure. Background technique [0002] A metal silicide is a thermally stable metal compound formed by reacting a transition metal with silicon. Since the metal silicide exhibits the advantages of low resistivity and high thermal stability, and is especially suitable for the current silicon process, the metal silicide has been widely used in the semiconductor device process. Specifically, the metal silicide layer formed on the surface of the gate electrode and the source / drain region can effectively reduce the specific resistance of the gate electrode and the contact resistance of the source / drain. [0003] However, due to factors such as the grain size of the transition metal or oxide residues on the substrate surface, defects will occur in the growth of metal silicid...

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a metal silicide defect detection method and a method for forming a semiconductor structure, so as to solve the problem of low detection accuracy of existing metal silicide defects

Images