InP quantum dot and preparation method thereof

Abstract

The invention discloses a preparation method of an InP quantum dot, relates to the field of quantum dot materials, comprising the following steps: firstly, water and oxygen are removed from a reactionvessel, then a homogeneous precursor solution of indium and zinc is prepared, a phosphorus precursor is added, a synthetic shell material is added, and then, an InP quantum dot structure with a shellstructure is prepared by increasing the shell thickness while raising the temperature. The InP crystal nucleus of the InP quantum dot prepared by the invention are nano-structures, and the shell layer composition comprises one or several of ZnS, ZnSe and ZnSeS; the fluorescence emission peaks range from 450 nm to 700 nm, and the half maximum width is less than 55 nm. The invention can effectivelycontrol crystal nucleus growth and fluorescence emission wavelength, and obtain InP quantum dots with small and uniform crystal nucleus diameter, wide luminous color gamut and narrow half-maximum width. At the same time, it can reduce the surface oxidation of the crystal nucleus, promote the thickness of the shell layer with high quality and low defects, and improve the luminescence efficiency ofInP quantum dot.

Description

technical field [0001] The invention relates to the field of quantum dot materials, in particular to an InP quantum dot and a preparation method thereof. Background technique [0002] Quantum dots are widely used in technical fields such as LED light-emitting devices, solar cells, bioluminescent imaging, and lasers due to their high-purity color, high fluorescence intensity, excellent luminous range adjustability, and good biocompatibility. Although II-VI quantum dots commonly used in the market have high optical properties, they contain heavy metal element cadmium, which will cause adverse effects on human health and the ecological environment, limiting its application and promotion. [0003] As a representative of III-V semiconductor materials, InP quantum dot materials are regarded as the next-generation quantum dot star materials because of their low toxicity and suitable luminescence range. In the current preparation technology of InP quantum dots, organic alkyl phosph...

AI Technical Summary

Problems solved by technology

At present, the commonly used encapsulation method for III-V InP quantum dots is to gradually increase the temperature at a higher temperature, by injecting in batches including zinc precursor solution (shell cation precursor), sulfur precursor solution and selenium precursor. One or more methods in the solution (shell anion precursor) are carried out, the method process is complicated, and the preparation time is long, the repeatability is poor, the production cost is still high, and the half-width of the InP quantum dots obtained is relatively large

[0005] Compared with the preparation of InP quantum dots by using organic alkylphosphine such as tris(trimethylsilyl)phosphine as phosphorus source, using organic aminophosphine such as tris(dimethylamino)phosphine and tris(diethylamino)phosphine as phosphorus source Although there are many advantages in the InP quantum dots synthesized from natural sources, the half-maximum width of the synthesized InP quantum dots is wider, and it is difficult to obtain blue InP quantum dots with bluer fluorescence emission peaks.

Images