Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-throughput fabrication of thick-film composite material chips based on multi-source plasma spraying and laser post-processing

A technology of combining material chips and plasma, applied in metal material coating process, coating, melting spray plating, etc., can solve problems such as high cost and long cycle, and achieve cost reduction, exponential speed increase, and rapid and continuous preparation. Effect

Active Publication Date: 2021-11-02
SHANGHAI UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The main purpose of this application is to provide a high-throughput preparation method for thick-film composite material chips based on multi-source plasma spraying and laser post-treatment to solve the problems of high cost and long cycle of traditional material preparation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-throughput fabrication of thick-film composite material chips based on multi-source plasma spraying and laser post-processing
  • High-throughput fabrication of thick-film composite material chips based on multi-source plasma spraying and laser post-processing
  • High-throughput fabrication of thick-film composite material chips based on multi-source plasma spraying and laser post-processing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A method for high-throughput preparation of thick-film composite material chips based on multi-source plasma spraying and laser post-treatment, comprising the following steps:

[0035] (1) Pre-preparing composite material chips whose composition changes continuously along the direction of the substrate surface with multi-station plasma spraying equipment:

[0036] 1a. Select the pure metal powder of the component elements of the combined material chip to be prepared; select the base material of the combined material chip; wherein, the base material of the combined material chip is a pure metal plate having the same main component elements as the combined material chip;

[0037] 1b. Sandblasting the surface of the base material, cleaning the base material with acetone solution and ethanol solution, and then putting it into a drying oven to dry; wherein, the drying temperature is 160-200°C, and the drying time is 1.5-2.5h;

[0038] 1c. Pour the pure metal powder into the ...

Embodiment 2

[0054] A method for high-throughput preparation of thick-film composite material chips based on multi-source plasma spraying and laser post-treatment, comprising the following steps:

[0055] (1) Pre-preparing composite material chips whose composition changes continuously along the direction of the substrate surface with multi-station plasma spraying equipment:

[0056] 1a. Select the pure metal powder of the component elements of the combined material chip to be prepared. If the high-energy wear-resistant NiAl material is screened, then select pure nickel powder with a purity higher than 99.99%, and pure aluminum powder with a purity higher than 99.99%; select the combined material chip Substrate, which requires a pure metal plate with the same main constituent elements as the chip;

[0057] 1b. Sandblast the surface of the substrate, wash the substrate with acetone solution and ethanol solution, and then put it in a drying oven to dry; wherein, the drying temperature is 180...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The present application discloses a high-throughput preparation method for thick-film composite material chips based on multi-source plasma spraying and laser post-treatment. The high-throughput preparation method of the thick-film composite material chip comprises the following steps: (1) pre-preparing a composite material chip whose composition changes continuously along the direction of the substrate surface with a multi-station plasma spraying equipment; (2) using a high-energy laser to process the composite material chip Post-processing, alloying the components of the composite material chip; (3) Cutting, characterizing, and screening the composite material chip to obtain the product. This application solves the problems of high cost and long period of research and development of traditional materials.

Description

technical field [0001] The present application relates to the field of metal material composite chips, in particular, to a high-throughput preparation method for thick film composite material chips based on multi-source plasma spraying and laser post-treatment. Background technique [0002] Material innovation is not only the core element of developing various disruptive technologies, but also the cornerstone of modern high-end manufacturing and the carrier of technological development. However, the speed of traditional material research and development based on "trial and error" can no longer meet the needs of the current society. Therefore, there is an urgent need to develop rapid and effective means of research and development of new materials. The high-throughput preparation of thin-film composite chips based on magnetron sputtering has been relatively mature, but the preparation of thick films with higher melting points has not yet appeared, so the preparation technolog...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C4/134C23C4/18C23C24/10
CPCC23C4/18C23C24/103C23C4/134
Inventor 贾延东徐龙王刚穆永坤张靓博易军黄波
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products