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Preparation method of graphene compounded/metal ion doped defective semiconductor photocatalyst

A graphene composite and metal ion technology, which is applied in chemical instruments and methods, physical/chemical process catalysts, non-metallic elements, etc., to achieve good dispersion, excellent photocatalytic performance, and process controllable effects

Inactive Publication Date: 2019-08-16
SHENYANG INSTITUTE OF CHEMICAL TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the relatively high valence band energy and faster recombination process of photoinduced electrons still cannot meet our requirements

Method used

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  • Preparation method of graphene compounded/metal ion doped defective semiconductor photocatalyst

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Experimental program
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Embodiment 1

[0019] (1) Graphene oxide was prepared by optimizing the Hummers method. Firstly, graphite flakes are oxidized by strong acid and strong oxidant, and graphite oxide with a higher degree of oxidation is prepared by controlling the addition method of oxidant, reaction temperature and other factors during the reaction process. Then, in aqueous solution, graphite oxide was exfoliated by ultrasonic action to prepare a monodisperse graphene oxide solution (1 g / L).

[0020] (2) Weigh 0.1036 Zn(OAc) 2 2H 2 O, 0.2839g of In(OAc) 3 and 0.00047g of AgNO 3 Dissolve in 50 mL of deionized water, then add 0.5 mL of graphene oxide solution, sonicate for 30 minutes, then add 0.0687 g of L-cysteine ​​and sonicate for 30 minutes to be fully dissolved, transfer the solution to 100 mL of polytetrafluoroethylene In the inner liner, add the thioacetamide of 0.1418g, stir 30min, put the reaction kettle at 160 o C under the condition of hydrothermal reaction for 6h. Naturally cool to room tempe...

Embodiment 2

[0022] As described in Example 1, the difference is that the amount of graphene oxide solution added in step (2) is adjusted to 1 mL, then the final catalyst is 0.5wt%RGO / Ag:ZnIn containing 0.5wt% RGO 2 S 4 .

Embodiment 3

[0024] As described in Example 1, the difference is that the amount of graphene oxide solution added in step (2) is adjusted to 1.5mL, then the final catalyst is 0.5wt%RGO / Ag:ZnIn containing 0.5wt% RGO 2 S 4 .

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Abstract

The invention relates to a preparation method of a graphene compounded / metal ion doped defective semiconductor photocatalyst, and relates to a preparation method of a photocatalytic functional material. With a ternary sulfide ZnIn2S4 as a reference, Ag<+>, a zinc source, an indium source, a sulfur source and oxidized graphene are subjected to a reaction under a hydrothermal condition according toa certain molar ratio in order to produce the target photocatalyst. The visible light photocatalyst is definite in structure and composition, and the visible light spectral response range of ZnIn2S4 can be obviously enhanced through doping of Ag <+>; after the graphene is compounded with the graphene, the diffusion range of photon-generated carriers can be increased, so that recombination of photo-generated electron-hole pairs is inhibited, and the visible light catalytic activity is enhanced. The product is a promising visible light photocatalytic material.

Description

technical field [0001] The invention relates to a method for preparing a photocatalyst, in particular to a method for preparing a graphene composite metal ion-doped defect semiconductor photocatalyst. Background technique [0002] Hydrogen energy, as an environmentally friendly, clean and pollution-free new energy source, can be prepared by photocatalytic water splitting. In order to achieve efficient water splitting and hydrogen production, a large number of semiconductor photocatalysts for hydrogen production have been developed. Including TiO 2 Traditional photocatalysts including other oxide semiconductors can only absorb ultraviolet light accounting for only 5% of the solar spectrum due to their large band gap (>3.0eV). Therefore, one of the most critical challenges in this field is to develop visible-light active photocatalysts. [0003] In recent years, ZnIn 2 S 4 As an important component of Ⅱ-Ⅲ-Ⅳ ternary chalcogenides, due to its unique optical properties an...

Claims

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Application Information

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IPC IPC(8): B01J27/04C01B3/04
CPCB01J27/04C01B3/042C01B2203/0277B01J35/39Y02E60/36
Inventor 徐振和高雨徐宝彤孙亚光丁茯
Owner SHENYANG INSTITUTE OF CHEMICAL TECHNOLOGY
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