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Film bulk acoustic wave resonator and communication device

A thin-film bulk acoustic wave and resonator technology, applied in electrical components, impedance networks, etc., can solve the problems of corrosion damage of the temperature compensation layer, affecting the temperature stability of thin-film bulk acoustic wave resonators, etc. The effect of temperature stability

Pending Publication Date: 2019-07-26
嘉兴宏蓝电子技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the temperature compensation layer and the sacrificial layer are usually made of silicon dioxide or doped silicon dioxide, the etchant for the sacrificial layer will also cause corrosion damage to the temperature compensation layer, thereby affecting the temperature stability of the thin film bulk acoustic resonator

Method used

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  • Film bulk acoustic wave resonator and communication device
  • Film bulk acoustic wave resonator and communication device
  • Film bulk acoustic wave resonator and communication device

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Embodiment Construction

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0026] In addition, the term "and / or" in this article is only an association relationship describing associated objects, indicating that there may be three relationships, for example, A and / or B may indicate: A exists alone, A and B exist simultaneously, There are three cases of B alone. In addition, the character " / " in this article generally indicates that the contextual objects are an "or" relationship.

[0027] The specific implementation manners of the p...

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Abstract

The invention discloses a film bulk acoustic resonator and a communication device thereof. The resonator includes a substrate, a groove is formed in the upper surface of the substrate; the groove is provided with a boundary; a bottom electrode layer, a piezoelectric layer and a top electrode layer are sequentially arranged on the substrate; a first temperature compensation layer is arranged between the bottom electrode layer and the piezoelectric layer; a second temperature compensation layer is arranged between the piezoelectric layer and the top electrode layer, protection cavities are formed in the side, facing the first temperature compensation layer, of the piezoelectric layer and the other side, facing the second temperature compensation layer, of the piezoelectric layer respectively; the first temperature compensation layer and the second temperature compensation layer are placed in the protection cavities respectively, and the lengths of the protection cavities extend out of the boundary of the groove. According to the resonator, the protection cavity is formed in one side, close to the temperature compensation layer, of the piezoelectric layer; and the temperature compensation layer is embedded into the protection cavity, so that the end part of the temperature compensation layer is covered with a thicker piezoelectric material and plays a protection role, the etchingcapability of the etching solution is effectively weakened, the temperature compensation layer is prevented from being eroded by the sacrificial layer etching solution, and the temperature stability of the resonator is ensured.

Description

technical field [0001] The invention relates to the technical field of wireless communication radio frequency front-end devices, in particular to a thin film bulk acoustic wave resonator and a communication device. Background technique [0002] With the development of wireless communication technology and smart phones, the RF front-end has higher and higher requirements on the performance indicators and integration of components. RF front-end filters, duplexers, and multiplexers based on thin film bulk acoustic wave devices have been widely used in smartphones, communication terminals, and In the communication base station, it will be applied in the communication equipment of the Internet of Vehicles, industrial control and other Internet of Things terminals in the future. In addition, oscillators based on thin film bulk acoustic wave devices are of great application value in high-speed serial data devices such as SATA hard drives, USB3.0 standard PC peripherals, C-type int...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/00H03H9/02
CPCH03H9/0014H03H9/02015H03H9/02102
Inventor 不公告发明人
Owner 嘉兴宏蓝电子技术有限公司
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