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Multi-frequency terahertz radiation source based on Dirac semi-metal transmission grating

A terahertz radiation source and transmission grating technology, applied in the field of radiation source engineering, can solve the problems of low radiation power and inability to cover the entire terahertz band, etc.

Inactive Publication Date: 2019-07-12
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
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Problems solved by technology

[0006] In view of the above-mentioned technical background, the purpose of the present invention is to solve the problem that the existing terahertz radiation source technology cannot cover the entire terahertz band and the radiation power is low, and to provide a room temperature working, multi-frequency, high-power, which can cover the entire terahertz Coherent Terahertz Radiation Sources in the Hertzian Band

Method used

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  • Multi-frequency terahertz radiation source based on Dirac semi-metal transmission grating
  • Multi-frequency terahertz radiation source based on Dirac semi-metal transmission grating
  • Multi-frequency terahertz radiation source based on Dirac semi-metal transmission grating

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Embodiment Construction

[0056] Specific implementation plan

[0057] The embodiment is a transmissive grating made of Dirac semi-metal. figure 1 The cross-sectional schematic diagram of the structure in the XOZ plane is given. From bottom to top, Dirac semi-metallic transmission grating and moving electrons are shown. For the terahertz band, the period of the grating is usually on the order of micrometers, and its production requires the use of microfabrication technology. First, a mask with a periodic structure is made by photolithography, and then the mask is covered on a Dirac semi-metal plate with a certain thickness, and finally the metal plate is etched into a transmission grating by etching technology.

[0058] There are two SPPs modes in the Dirac semi-metal transmission grating: conventional SPPs and cavity SPPs. The regular SPPs mode is localized on the grating surface, while the cavity SPPs mode is localized in the grating gap. When moving electrons are emitted from the cathode and pass over...

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Abstract

The invention discloses a multi-frequency terahertz radiation source based on a Dirac semi-metal transmission grating. The multi-frequency terahertz radiation source comprises a transmission grating made of a Dirac semi-metal material, moving electrons sweep past the surface of the grating to excite two types of surface plasma wave modes in the grating, the dispersion characteristics and excitation conditions of the two modes are different, but the two modes can be converted into enhanced multi-frequency coherent terahertz radiation by grating diffraction, and the radiation power density is enhanced by surface plasma waves by two to three orders of magnitude. The multi-frequency terahertz radiation source can be used for development of the coherent terahertz radiation source with room temperature working, multiple frequencies and high power capable of covering the whole terahertz wave band.

Description

Technical field [0001] The invention belongs to the technical field of radiation source engineering, and relates to a radiation source based on the conversion of two types of surface plasma wave modes in a Dirac semi-metallic transmission grating into multi-frequency terahertz radiation, in particular, a radiation source that can be used for terahertz radiation Coherent terahertz radiation source for imaging, security and communication systems. Background technique [0002] Terahertz waves are between microwave and infrared in the electromagnetic spectrum. Terahertz waves have many unique properties. First of all, their photon energy is low, lower than the bond energy of various chemical bonds, and can be used for non-destructive safety testing of humans and various organisms. Secondly, the terahertz wavelength is longer than the wavelength of visible light, can see through smoke, etc., and has good penetration to many substances (ceramics, fats, carbon plates, cloth, plastics)....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S1/02
CPCH01S1/02
Inventor 赵陶胡旻
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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