Silicon etchant composition having low selection ratio (Si (100)/Si (111)) for two crystal lattice directions and low silica etching rate
A technology of etchant and composition, applied in the field of silicon etchant composition, can solve problems such as inability to effectively protect the silicon dioxide structure, damage to the silicon dioxide layer, and inability to apply advanced semiconductor manufacturing processes
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[0015] According to the first embodiment of the present invention, the present invention provides an etchant composition comprising: at least one ammonium compound, at least one amide compound and at least one polyol compound, wherein the above ammonium compound further comprises at least one A quaternary ammonium compound (for example, quaternary ammonium hydroxide), the amine compound further comprises at least one primary amine compound and at least one polyol compound. In addition, based on the total weight of the composition, about 0.5% to about 5% by weight of at least one ammonium compound, about 5% by weight to 55% by weight of at least one amine compound, about 15% by weight to about 80% by weight of at least one A polyol compound, and about 10% to 35% by weight of an aqueous medium. The aqueous medium used in the present invention has complete mixing compatibility in any proportion.
[0016] In a specific embodiment, the quaternary ammonium hydroxide suitable for us...
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