Method and circuit for improving power amplifier overshoot suppression efficiency under same trigger signal and power amplifier

A technology of trigger signal and control circuit, applied in pulse processing, pulse generation, electrical components, etc., can solve the problems of low stability and low efficiency of power amplifier, and achieve the effect of improving efficiency, high efficiency and improving stability

Inactive Publication Date: 2019-07-05
NORTHWEST INST OF NUCLEAR TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] The technical problem to be solved by the present invention is: to provide a hybrid high-power solid-state pulse power amplifier voltage overshoot suppression and efficiency improvement method under the same trigger ...

Method used

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  • Method and circuit for improving power amplifier overshoot suppression efficiency under same trigger signal and power amplifier
  • Method and circuit for improving power amplifier overshoot suppression efficiency under same trigger signal and power amplifier
  • Method and circuit for improving power amplifier overshoot suppression efficiency under same trigger signal and power amplifier

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Embodiment 1

[0075] The pulse power amplifier of the present invention works in the high-efficiency class B in the front part of the microwave excitation signal. Before the falling edge of the excitation signal arrives, the grid bias voltage is adjusted by the grid voltage control circuit to change the working category of the power amplifier, and the grid bias The voltage is adjusted to class A, so that the power amplifier works in class A at the moment of the falling edge of the excitation signal, so that the drain voltage does not overshoot at the moment when the microwave excitation signal is turned off.

[0076] Such as Figure 4 As shown, it specifically includes the following steps:

[0077] 1] Before time t0:

[0078] The pulse signal generator does not generate a pulse trigger signal, and the grid voltage control circuit provides the pulse power amplifier with a class B operating point bias voltage V gb ;Pulse power amplifier does not work;

[0079] 2] Time t0:

[0080] The pul...

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Abstract

The invention belongs to the field of solid-state microwave power amplifiers, particularly provides a method and circuit for improving the power amplifier overshoot suppression efficiency under the same trigger signa and a power amplifier, and aims to solve the problem that the power amplifier is low in stability or efficiency. The part, in front of a microwave excitation signal, of the pulse power amplifier works in a high-efficiency class B; the falling edge detection circuit is used for detecting the falling edge of an excitation signal of the power amplifier; before the falling edge of theexcitation signal arrives, the grid voltage control circuit is used for adjusting the grid bias voltage, the working type of the power amplifier is changed, and the grid bias voltage is adjusted to the type A, so that the power amplifier works in the type A at the moment of the falling edge of the excitation signal, and the drain voltage does not generate overshoot at the moment of closing the microwave excitation signal. The high stability of the A-type pulse power amplifier and the high efficiency of the B-type pulse power amplifier can be obtained at the same time.

Description

technical field [0001] The invention belongs to the field of solid-state microwave power amplifiers, in particular to a method and circuit for overshoot suppression and efficiency improvement of a pulse power amplifier under the same trigger signal. Background technique [0002] The microwave power amplifier is an important part of the microwave system, which can amplify the weak microwave signal to the required power level, and is generally located at the end of the transmitter. widely used. With the maturity of the third-generation semiconductor material GaN process, the output power of the power amplifier has also increased significantly. At present, the output power of a single tube has exceeded 1kW. For example, the paper A kW-class AlGaN / GaN HEMT Pallet Amplifier for S-band High Power Application published by E.Mitani et al. in 2007 (published in Proceedings of the 2nd European Microwave Integrated Circuits Conference), L.Haapala et al. in 2016 The paper Kilowatt-lev...

Claims

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Application Information

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IPC IPC(8): H03K3/011H03K5/133
CPCH03K3/011H03K5/133
Inventor 方文饶黄文华王璐璐付超邵浩李平章勇华杨志强巴涛
Owner NORTHWEST INST OF NUCLEAR TECH
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