Manufacturing method of semiconductor device and integrated semiconductor device

Abstract

The invention provides a manufacturing method of a semiconductor device and an integrated semiconductor device. The method comprises the steps of: forming a dielectric island on an epitaxial layer inthe manufacturing process of the semiconductor device, wherein in the process of forming a channel by employing a depletion type device, because the dielectric island blocks the injection of channel ions and the ion concentration at the lower portion of the dielectric island is low, so that the breakdown reliability of the device in an on state is greatly improved, meanwhile, due to the existenceof the dielectric islands, the thickness of the gate dielectric layer is increased, the gate capacitance is reduced, and the switching loss of the device is reduced. The dielectric island is used as amask in the manufacturing process, a first doping type source region can be formed in a self-aligning mode, a photoetching plate is saved, and the process cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a semiconductor device and an integrated semiconductor device. Background technique [0002] Existing semiconductor devices include enhancement mode and depletion mode semiconductor devices, such as vertical double diffused metal oxide field effect devices (VDMOS) including enhancement mode VDMOS devices and depletion mode VDMOS devices, which have good on-off characteristics and low power consumption. Advantages, widely used in LED drivers, power adapters, etc. However, most of these existing semiconductor devices are individually packaged, which brings disadvantages such as increased process cost and excessive chip area. [0003] A method of integrating an enhanced VDMOS device and a depleted VDMOS device semiconductor device is based on the conventional enhanced VDMOS manufacturing process. It is often necessary to add a Vt injection plate...

AI Technical Summary

Problems solved by technology

However, most of these existing semiconductor devices are independently packaged, which brings disadvantages such as increased process costs and excessive chip area.

[0003] A method of integrating an enhanced VDMOS device and a depleted VDMOS device semiconductor device is based on the conventional enhanced VDMOS manufacturing process. It is often necessary to add a Vt injection plate to form a depleted channel on the surface, and the process is complicated. cost increase

However, when the depletion-mode VDMOS device works in the on-state, due to the high concentration near the channel surface, the depletion will be insufficient, resulting in an excessively high surface peak electric field and poor breakdown stability; at the same time, there are usually Severe working environments such as surge currents can easily lead to thermal burnout of the device during the process of passing the avalanche current; in the case of high frequency, the power consumption of the device will increase significantly

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