A kind of manufacturing method of semiconductor device and semiconductor device

Abstract

The present invention provides a manufacturing method of a semiconductor device and a semiconductor device. According to the manufacturing method of the semiconductor device and the semiconductor device, in the formation process of a depletion type device, a medium island is formed as a mask to perform self-alignment ion implantation to form a channel, the depth and the dosage concentration of thechannel region can be accurately controlled by control of the implantation energy and dosage to achieve the pinch-off voltage with high stability so as to omit the step of providing an ion implantation mask by employing the photolithography and the photolithography technique in the ion implantation regulation by the threshold voltage, reduce the process flow and reduce the process cost; and in the process of forming the channel in the depletion type device, the channel ion implantation can be blocked due to the medium island, the concentration of the ions at the lower portion of the medium island is low, so that the breakdown reliability of the semiconductor device in an open state is greatly improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a manufacturing method of a semiconductor device and a semiconductor device. Background technique [0002] Metal-oxide-semiconductor field effect transistors include depletion transistors and enhancement transistors, depletion transistors; when the voltage difference between the gate and source of the depletion transistor is zero, the depletion transistor can be turned on Work, so depletion mode transistors can also be called normally-on transistors. [0003] As the multi-chip packaging technology becomes more and more mature, high-reliability, low-cost discrete depletion-type vertical double-diffused metal-oxide semiconductor field-effect transistor (VDMOS) devices are in line with the mainstream trend of today's power device manufacturing. For traditional discrete depletion-mode VDMOS devices, in order to improve the pinch-off stability of the device, a threshold vol...

AI Technical Summary

Problems solved by technology

For traditional discrete depletion-mode VDMOS devices, in order to improve the pinch-off stability of the device, a threshold voltage (Vt) injection plate is usually added on the basis of the conventional enhanced VDMOS manufacturing process to form a depletion channel on the surface. However, this will increase the cost. At the same time, when the device is working in the on state, due to the high ion concentration near the channel surface, the surface peak electric field is too high, and the breakdown stability becomes poor.

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