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A kind of film and preparation method thereof and qled device

A thin film and device technology, applied in the field of quantum dots, can solve the problems of insufficient energy level and exciton binding capacity of quantum dots, low luminous efficiency of QLED devices, concentration quenching, etc., so as to suppress non-radiative energy transfer and concentration quenching. , high-efficiency QLED devices, reducing the effect of interaction

Active Publication Date: 2021-04-13
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a thin film and its preparation method and QLED device, aiming at solving the problem that some existing quantum dots have insufficient energy levels and exciton binding capabilities, and there is no radiation in solid thin films. Energy transfer and concentration quenching, resulting in low luminous efficiency in QLED devices

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  • A kind of film and preparation method thereof and qled device
  • A kind of film and preparation method thereof and qled device
  • A kind of film and preparation method thereof and qled device

Examples

Experimental program
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Embodiment 1

[0080] The preparation method of the thin film of different quantum dot weight percentages in this embodiment comprises the following steps:

[0081] 1) Weigh 20 mg of CdTe / CdZnS core-shell quantum dots and fully dissolve them in 10 mL of chlorobenzene to form a quantum dot solution with a concentration of 2 mg / mL. The quantum yield is 56%;

[0082] 2), respectively weigh 40mg, 30mg, 20mg, 10mg, 8mg, 4mg, 2mg, 1mg, 0.5mg, 0.3mg, 0.1mg of PVK (weight average molecular weight: ~1.1 million) fully dissolved in 0.5mL of chlorine benzene;

[0083] 3) Add 0.5mL of the quantum dot solution prepared in step 1) to the above-mentioned PVK chlorobenzene solution and mix thoroughly to form PVK / QD weight concentrations of 40 / 1, 30 / 1, 20 / 1, 10 / 1, 8 / 1, 4 / 1, 2 / 1, 1 / 1, 0.5 / 1, 0.3 / 1, 0.1 / 1 mg / mL chlorobenzene solution;

[0084] 4) In an inert atmosphere, the above-mentioned chlorobenzene solution is spin-coated to form a film, and annealed at 120° C. for 15 minutes to prepare films with diff...

Embodiment 2

[0086] The effect of adding barrier polymer materials on the quantum yield of thin film luminescence

[0087] The luminescence quantum yields of each film in Example 1 are shown in Table 1 below. Compared with the film formed by pure quantum dot material (the last row), different proportions of barrier polymer materials (in this example, PVK) can significantly improve the luminescence quantum yield of the film, from 3% of the pure film to 53%, which is basically close to the luminescence quantum yield of quantum dots in solution, indicating the isolation effect of PVK polymers in the film for quantum dots good. In this example, PVK has a large weight-average molecular weight (1.1 million), and it can be seen that the weight percentage of QDs in a wide range of 2-90% can improve the luminous efficiency.

[0088] Table 1. Luminescence quantum yield of thin films

[0089]

Embodiment 3

[0091] The preparation method of the thin film of different quantum dot weight percentages in this embodiment comprises the following steps:

[0092] 1) Weigh 20 mg of CdTe / CdZnS core-shell quantum dots and fully dissolve them in 10 mL of chlorobenzene to form a quantum dot solution with a concentration of 2 mg / mL. The quantum yield is 56%;

[0093] 2), respectively weigh 40mg, 30mg, 20mg, 10mg, 8mg, 4mg, 2mg, 1mg, 0.5mg, 0.3mg, 0.1mg of PVK (weight-average molecular weight: ~500,000) fully dissolved in 0.5mL of chlorine benzene;

[0094] 3) Add 0.5mL of the quantum dot solution prepared in step 1) to the above-mentioned PVK chlorobenzene solution and mix thoroughly to form PVK / QD weight concentrations of 40 / 1, 30 / 1, 20 / 1, 10 / 1, 8 / 1, 4 / 1, 2 / 1, 1 / 1, 0.5 / 1, 0.3 / 1, 0.1 / 1 mg / mL chlorobenzene solution;

[0095] 4) In an inert atmosphere, the above-mentioned chlorobenzene solution is spin-coated to form a film, and annealed at 120° C. for 15 minutes to prepare films with differen...

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Abstract

The invention discloses a thin film and its preparation method and a QLED device. The thin film includes a polymer material and quantum dots dispersed in the polymer material, wherein the polymer material includes at least one barrier polymer material. The weight-average molecular weight of the barrier polymer material is higher than 100,000. Compared with the existing thin film of pure quantum dots, the film of the present invention contains quantum dots and polymer materials, and the polymer materials are used to effectively isolate quantum dots and increase the mutual distance between quantum dots, thereby reducing the mutual interaction between quantum dots. It acts and suppresses the non-radiative energy transfer and concentration quenching between quantum dots to the greatest extent, so as to improve the luminous quantum yield of quantum dots in the thin film. Utilizing this thin film with high luminous quantum yield into QLED devices can realize high-efficiency QLED devices.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a thin film, a preparation method thereof, and a QLED device. Background technique [0002] Quantum dots are a special material that is confined to the order of nanometers in three dimensions. This remarkable quantum confinement effect makes quantum dots have many unique nanometer properties: continuously adjustable emission wavelength, narrow emission wavelength, Broad absorption spectrum, high luminous intensity, long fluorescence lifetime and good biocompatibility, etc. These characteristics make quantum dots have broad application prospects in biomarkers, flat panel displays, solid-state lighting, photovoltaic solar energy and other fields. [0003] In typical electroluminescent display applications, quantum dots are usually filmed separately to form a light-emitting layer containing only quantum dot materials, which is different from organic light-emitting diode device...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00
Inventor 杨一行程陆玲
Owner TCL CORPORATION
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