Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Film, preparation method thereof and QLED device

A thin film and device technology, applied in the field of quantum dots, can solve the problems of concentration quenching, insufficient energy level and exciton binding ability of quantum dots, and low luminous efficiency of QLED devices, so as to reduce interaction and suppress non-radiative energy transfer and effect of concentration quenching, high-efficiency QLED devices

Active Publication Date: 2019-07-02
TCL CORPORATION
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a thin film and its preparation method and QLED device, aiming at solving the problem that some existing quantum dots have insufficient energy levels and exciton binding capabilities, and there is no radiation in solid thin films. Energy transfer and concentration quenching, resulting in low luminous efficiency in QLED devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Film, preparation method thereof and QLED device
  • Film, preparation method thereof and QLED device
  • Film, preparation method thereof and QLED device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0103] The preparation method of the thin film of different quantum dot weight percentages in this embodiment comprises the following steps:

[0104] 1) Weigh 20 mg of CdTe / CdZnS core-shell quantum dots and fully dissolve them in 10 mL of chlorobenzene to form a quantum dot solution with a concentration of 2 mg / mL. The luminescence peak of this quantum dot solution is 631 nm, with a half-peak width is 30 nm, and the luminous quantum yield is 56%;

[0105] 2) Weigh 40 mg, 30 mg, 20 mg, 10 mg, 8 mg, 4 mg, 2 mg, 1 mg, 0.5 mg, 0.3 mg, 0.1 mg of PVK respectively (weight average molecular weight: ~1.1 million) Each was fully dissolved in 0.5 mL of chlorobenzene;

[0106] 3) Add 0.5 mL of the quantum dot solution prepared in step 1) to the above-mentioned PVK chlorobenzene solution and mix thoroughly to form PVK / QD weight concentrations of 40 / 1, 30 / 1, 20 / 1, 10 / 1, 8 / 1, 4 / 1, 2 / 1, 1 / 1, 0.5 / 1, 0.3 / 1, 0.1 / 1 mg / mL chlorobenzene solution;

[0107] 4) In an inert atmosphere, the above-men...

Embodiment 2

[0109] The effect of adding barrier polymer materials on the quantum yield of thin film luminescence

[0110] The luminescence quantum yields of each film in Example 1 are shown in Table 1 below. Compared with the film formed by pure quantum dot material (the last row), different proportions of barrier polymer materials (in this example, PVK) can significantly improve the luminescence quantum yield of the film, from 3% of the pure film to 53%, which is basically close to the luminescence quantum yield of quantum dots in the solution, indicating the isolation effect of PVK polymers on quantum dots in the film good. In this example, PVK has a large weight-average molecular weight (1.1 million). It can be seen that the weight percentage of QD can improve the luminous efficiency in a wide range of 2-90%.

[0111] Table 1. Luminescence quantum yield of thin films

[0112]

Embodiment 3

[0114] The preparation method of the thin film of different quantum dot weight percentages in this embodiment comprises the following steps:

[0115] 1) Weigh 20 mg of CdTe / CdZnS core-shell quantum dots and fully dissolve them in 10 mL of chlorobenzene to form a quantum dot solution with a concentration of 2 mg / mL. The luminescence peak of this quantum dot solution is 631 nm, with a half-peak width is 30 nm, and the luminous quantum yield is 56%;

[0116] 2) Weigh 40 mg, 30 mg, 20 mg, 10 mg, 8 mg, 4 mg, 2 mg, 1 mg, 0.5 mg, 0.3 mg, 0.1 mg of PVK (weight average molecular weight: ~500,000) Each was fully dissolved in 0.5 mL of chlorobenzene;

[0117] 3) Add 0.5 mL of the quantum dot solution prepared in step 1) to the above-mentioned PVK chlorobenzene solution and mix thoroughly to form PVK / QD weight concentrations of 40 / 1, 30 / 1, 20 / 1, 10 / 1, 8 / 1, 4 / 1, 2 / 1, 1 / 1, 0.5 / 1, 0.3 / 1, 0.1 / 1 mg / mL chlorobenzene solution;

[0118] 4) In an inert atmosphere, the above-mentioned chlorobenz...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Luminescence peakaaaaaaaaaa
Half widthaaaaaaaaaa
Half widthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a film, a preparation method thereof and a QLED device. The film includes a polymer material and quantum dots dispersed in the polymer material, wherein the polymer material includes at least one barrier polymer material and the weight average molecular weight of the barrier polymer material is higher than 100,000. Compared with a conventional film of pure quantum dots, thefilm of the invention contains the quantum dots and the polymer material. The polymer material is used to effectively isolate the quantum dots and increase the mutual distance among the quantum dots,thereby reducing the interaction among the quantum dots and maximally suppress the radiation-free energy transfer and concentration quenching among the quantum dots to achieve the improvement of theluminescent quantum yield of the quantum dots in the film. The efficient QLED device can be realized by applying the film with the high luminescent quantum yield into the QLED device.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a thin film, a preparation method thereof, and a QLED device. Background technique [0002] Quantum dots are a special material that is confined to the order of nanometers in three dimensions. This remarkable quantum confinement effect makes quantum dots have many unique nanometer properties: continuously adjustable emission wavelength, narrow emission wavelength, Broad absorption spectrum, high luminous intensity, long fluorescence lifetime and good biocompatibility, etc. These characteristics make quantum dots have broad application prospects in biomarkers, flat panel displays, solid-state lighting, photovoltaic solar energy and other fields. [0003] In typical electroluminescent display applications, quantum dots are usually filmed separately to form a light-emitting layer containing only quantum dot materials, which is different from organic light-emitting diode device...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/50H01L51/54H01L51/56C09K11/02C09K11/88B82Y30/00
CPCC09K11/025C09K11/883B82Y30/00H10K50/115H10K2102/00H10K71/00
Inventor 杨一行程陆玲
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com