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High-temperature purification method of zinc selenide raw material

A high-temperature purification and zinc selenide technology, applied in chemical instruments and methods, polycrystalline material growth, from condensed steam, etc., can solve the problems of zinc selenide content, deviation of stoichiometric ratio, etc., and achieve the effect of optimizing the stoichiometric ratio

Inactive Publication Date: 2019-06-28
BEIJING SINOMA SYNTHETIC CRYSTALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since graphite is used as a substrate in the synthesis environment, the polycrystalline material contains carbon impurities. In addition, during the manufacture and storage of zinc selenide, it is inevitable to be in contact with the air, so the surface of the polycrystalline material absorbs water in the air. and small molecular gas hydrogen to form -OH and Se-H bonds, resulting in oxygen and hydrogen impurities in the raw material
The polycrystalline material synthesized by CVD method will make appropriate changes according to the growth situation during the synthesis due to the adjustment of the evaporation rate of the raw material and the pressure and flow of the carrier gas. Therefore, this process will inevitably lead to the deviation of the stoichiometric ratio of zinc selenide.

Method used

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Examples

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Effect test

Embodiment 1

[0045] The present embodiment provides a high-temperature purification method for zinc selenide raw materials, the steps of which are:

[0046] First, the high-purity quartz crucible 4 is pre-processed, the quartz crucible 4 is put into aqua regia and soaked for 11 hours, then the acid solution attached is rinsed off with deionized water, put into acetone, and ultrasonically cleaned in an ultrasonic cleaner for 30 minutes, and then use Rinse with deionized water to remove the attached acetone, put in deionized water and ultrasonically clean it in an ultrasonic cleaner for 30 minutes, take it out, pour out the deionized water, dry it, then put it into a crystal growth furnace, and install double O-rings 9 Connect the vacuum system 8, the inert gas gas system 7 and the hydrogen gas system 11, close the gas system 7 and the hydrogen gas system 11, open the vacuum system 8 for vacuuming operation, and the vacuum degree reaches 1×10 -5 Below Pa, heat up and heat up to 1100°C at a h...

Embodiment 2

[0054] The present embodiment provides a high-temperature purification method for zinc selenide raw materials, the steps of which are:

[0055] First, the high-purity quartz crucible 4 is pre-processed, the quartz crucible 4 is put into aqua regia and soaked for 8 hours, then the acid solution attached is rinsed off with deionized water, put into acetone, and ultrasonically cleaned in an ultrasonic cleaner for 30 minutes, and then use Rinse with deionized water to remove the attached acetone, put in deionized water and ultrasonically clean it in an ultrasonic cleaner for 30 minutes, take it out, pour out the deionized water, dry it, then put it into a crystal growth furnace, and install double O-rings 9 Connect the vacuum system 8, the inert gas gas system 7 and the hydrogen gas system 11, close the gas system 7 and the hydrogen gas system 11, open the vacuum system 8 for vacuuming operation, and the vacuum degree reaches 1×10 -5 Below Pa, heat up and heat up to 1080°C at a he...

Embodiment 3

[0060] The present embodiment provides a high-temperature purification method for zinc selenide raw materials, the steps of which are:

[0061] First, the high-purity quartz crucible 4 is pre-processed, the quartz crucible 4 is put into aqua regia and soaked for 10 hours, then the acid solution attached is rinsed off with deionized water, put into acetone, and ultrasonically cleaned in an ultrasonic cleaner for 30 minutes, and Rinse with deionized water to remove the attached acetone, put in deionized water and ultrasonically clean it in an ultrasonic cleaner for 30 minutes, take it out, pour out the deionized water, dry it, then put it into a crystal growth furnace, and install double O-rings 9 Connect the vacuum system 8, the inert gas gas system 7 and the hydrogen gas system 11, close the gas system 7 and the hydrogen gas system 11, open the vacuum system 8 for vacuuming operation, and the vacuum degree reaches 1×10 -5 Below Pa, heat up and heat up to 1090°C at a heating ra...

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Abstract

The invention relates to a high-temperature purification method for a zinc selenide raw material. The method includes the steps of (1), crucible pretreatment; (2), crystal material grinding; (3), washbottle treatment; (4), calcination; (5) secondary grinding and growth. Impurity components in the zinc selenide raw material are removed, and the zinc selenide raw material ratio is optimized to be close to 1:1. By controlling the impurity source and performing high-temperature hydrogen-atmosphere calcination and high-temperature high-vacuum calcination, impurities in the zinc selenide raw material are effectively removed, the stoichiometric ratio is optimized, and a high-quality growth material is provided for subsequent growth of zinc selenide single crystals.

Description

technical field [0001] The invention relates to the technical field of semiconductor crystal growth, in particular to a high-temperature purification method for zinc selenide raw materials. Background technique [0002] Zinc selenide is a third-generation new semiconductor material, which has excellent properties compared with the first-generation Si, Ge, second-generation GaAs, and InP. Its forbidden band width is 2.8eV, and it has a direct transition energy band structure. It has high luminous efficiency and low loss coefficient, and is a popular material in the field of blue-green light-emitting devices; Therefore, it is the material of choice for infrared optical applications, and is widely used in infrared laser windows, infrared lenses, infrared thermal imaging cameras and infrared fairings. At the same time, in view of the inherent excellent physical and chemical properties of zinc selenide, it also has important applications in nonlinear optical devices, detection d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/48
Inventor 周振翔陈建荣黄存新岳麓
Owner BEIJING SINOMA SYNTHETIC CRYSTALS CO LTD
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