Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memristor device having paired-pulse facilitation characteristic and preparation method thereof

A memristive device and double-pulse technology, applied to memristive devices with double-pulse facilitation characteristics and their preparation, and the field of memristive devices and their preparation, can solve problems such as increased concentration levels, and achieve low cost, high conductivity and high conductivity. The effect of good stability, good conductivity and stability

Inactive Publication Date: 2019-06-25
NANJING UNIV OF POSTS & TELECOMM
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although after Ca 2+ channel closed, but residual Ca 2+ would make Ca 2+ elevated concentration levels

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memristor device having paired-pulse facilitation characteristic and preparation method thereof
  • Memristor device having paired-pulse facilitation characteristic and preparation method thereof
  • Memristor device having paired-pulse facilitation characteristic and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0040] The present invention also provides a method for preparing the above-mentioned memristive device, comprising the following steps:

[0041] S1) Bottom electrode deposition: In a vacuum environment, the substrate is fixed on the target gun of the sputtering system, the bottom electrode material is selected as the sputtering source, and the bottom electrode is deposited by a magnetron sputtering device. The bottom electrode is evenly and completely covered on the substrate. bottom surface;

[0042] S2) Dielectric layer sputtering: maintain the vacuum environment in step S1, replace the dielectric layer sputtering source, and uniformly and completely sputter the dielectric layer on the upper surface of the bottom electrode;

[0043] S3) Preparation of Mxene suspension: Mix Mxene and deionized water according to the mass ratio of 1:200, stir for 5min-15min, and prepare Mxene suspension;

[0044] S4) Preparation of resistive layer: absorb the upper turbid liquid of the Mxene...

Embodiment 1

[0048] A memristive device with a structure of copper / MXene / silicon dioxide / tungsten and double-pulse facilitation characteristics, the preparation method of which comprises the following steps:

[0049] S1) In a vacuum environment, fix the silicon substrate on the target gun of the sputtering system, select tungsten as the sputtering source, and deposit a tungsten electrode with a thickness of 90 nm by magnetron sputtering. The tungsten electrode is evenly and completely covered on the silicon the upper surface of the substrate;

[0050] S2) Maintaining the vacuum environment in step S1, replacing the silicon dioxide sputtering source, uniformly and completely sputtering a silicon dioxide dielectric layer with a thickness of 80 nm on the upper surface of the tungsten electrode;

[0051] S3) Mix Mxene and deionized water according to the mass ratio of 1:200, and stir for 10 minutes to prepare Mxene suspension;

[0052] S4) Take the upper turbid liquid of the Mxene suspension ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a memristor device having a paired-pulse facilitation characteristic and a preparation method thereof. The memristor device comprises a resistive layer located at a middle portion, and a top electrode and a bottom electrode disposed at the top and the bottom of the resistive layer respectively, wherein the top electrode and the bottom electrode are electrically connected toan external power source; the bottom electrode, the resistive layer, and a substrate match in shapes and sizes; the resistive layer includes a dielectric layer and a Mxene material film disposed abovethe dielectric layer; the top electrode is sputtered on the top of the Mxene material film through an opening of a mask plate; and the top and the bottom of the bottom electrode are in contact with the dielectric layer and the substrate respectively. The memristor device has good conductivity and stability, can realize a bionic synaptic function, and has broad application prospects. In addition,the preparation method of the invention is simple, efficient, and low in cost, and can be widely used in industrial production.

Description

technical field [0001] The invention relates to a memristive device and a preparation method thereof, in particular to a memristive device with double-pulse facilitation characteristics and a preparation method thereof, belonging to the technical field of brain-like devices. Background technique [0002] Memristor, derived from the English word Memory resistors, is a resistive device with a "memory" function. Its resistance value will change with the amount of charge flowing through it, and after turning off the power Keeping its resistance state means it can "remember" the amount of charge that passed through it previously. The physical mechanisms that the memristor relies on mainly include: conductive filament mechanism, boundary migration mechanism, phase transition mechanism, proton migration mechanism, etc. [0003] With the in-depth research on this new component of memristor, memristor is widely used in the fields of non-volatile memory, artificial neural network, ch...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 童祎高斐渠开放张缪城郭宇锋万相连晓娟
Owner NANJING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com