Encoding and decoding method and storage system of non-volatile memory

A non-volatile, memory technology, applied in the field of non-volatile memory encoding and decoding methods and storage systems, can solve the problem that the encoding and decoding method cannot meet the requirements of NandFlash memory bit error rate, etc., to improve error correction ability, reduce Decoding delay and power consumption, the effect of reducing the chance of occurrence

Active Publication Date: 2021-06-04
翰顺联电子科技(南京)有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Embodiments of the present invention provide a non-volatile memory encoding and decoding method and storage system to solve the problem that the existing encoding and decoding methods cannot meet the bit error rate requirements of Nand Flash memory when storing data

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Encoding and decoding method and storage system of non-volatile memory
  • Encoding and decoding method and storage system of non-volatile memory
  • Encoding and decoding method and storage system of non-volatile memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0056] Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the present invention. Rather, they are merely examples of apparatuses and methods consistent with aspects of the invention as recited in the appended claims.

[0057] The terms "comprising" and "having" and any variations thereof in the description and claims of the present invention are intended to cover a non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but optionally also includes unlisted steps or units, or optionally further include...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Embodiments of the present invention provide a method for encoding and decoding a nonvolatile memory and a storage system. The encoding and decoding method includes: determining the BCH check bit according to the effective data bit, and generating a BCH code, the length of the effective data bit is 1028 bytes, and the length of the BCH check bit is 8 bytes; determining the cyclic redundancy check according to the BCH code CRC check bit, generate a CRC code, the length of the CRC check bit is 8 bytes; determine the low density parity check LDPC check bit according to the CRC code, generate an LDPC code, and the cycle size of the LDPC code is 232 bits; for the coded The data are respectively subjected to BCH decoding processing, LDPC decoding processing and CRC decoding processing. The method of the embodiment of the present invention makes full use of the 16 bytes originally to be filled with 0s to perform BCH and CRC encoding, which not only ensures the correction efficiency of LDPC, but also reduces the chance of error floors and reduces the bit error rate of data storage.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of memory, and in particular, to a method for encoding and decoding a nonvolatile memory and a storage system. Background technique [0002] With the rapid development of semiconductor technology, semiconductor memory using semiconductor circuits as storage media has also been rapidly developed. Among them, Nand Flash memory, as a kind of non-volatile memory, has become the most commonly used storage device in the field of data storage because of its many advantages such as fast erasing and writing speed, low power consumption, large capacity, and low cost. However, with the increase of storage density and the emergence of multi-bit storage technology, the bit error rate problem of Nand Flash memory is becoming more and more serious when storing data. How to reduce the bit error rate has become an urgent problem to be solved. [0003] Low Density Parity Check (LDPC) codes have att...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/10G06F11/08G06F3/06
Inventor 王嗣钧杨世贤
Owner 翰顺联电子科技(南京)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap