Coding and decoding method of nonvolatile memory and storage system

A non-volatile memory technology, applied in the field of non-volatile memory encoding and decoding methods and storage systems, can solve the problem that the encoding and decoding methods cannot meet the requirements of the bit error rate of NandFlash memory, so as to improve the error correction ability and reduce the The number of iterations and the effect of reducing the bit error rate

Active Publication Date: 2019-06-25
翰顺联电子科技(南京)有限公司
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Problems solved by technology

[0005] Embodiments of the present invention provide a non-volatile memory encoding and decoding method and storage system to solve the problem that the existing encoding and decoding methods cannot meet the bit error rate requirements of Nand Flash memory when storing data

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  • Coding and decoding method of nonvolatile memory and storage system
  • Coding and decoding method of nonvolatile memory and storage system
  • Coding and decoding method of nonvolatile memory and storage system

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Embodiment Construction

[0056] Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the present invention. Rather, they are merely examples of apparatuses and methods consistent with aspects of the invention as recited in the appended claims.

[0057] The terms "comprising" and "having" and any variations thereof in the description and claims of the present invention are intended to cover a non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but optionally also includes unlisted steps or units, or optionally further include...

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Abstract

The embodiment of the invention provides a coding and decoding method of a nonvolatile memory and a storage system. The coding and decoding method comprises: determining a BCH check bit according to an effective data bit, a BCH code is generated, the length of the effective data bit is 1028 bytes, and the length of the BCH check bit is 8 bytes; determining a cyclic redundancy check (CRC) check bitaccording to the BCH code, and generating a CRC code, the CRC check bit having a length of 8 bytes; Determining a low-density parity check (LDPC) check bit according to the CRC code, and generating an LDPC code of which the cyclic size is 232 bits; and respectively carrying out BCH decoding processing, LDPC decoding processing and CRC decoding processing on the coded data. According to the methodprovided by the embodiment of the invention, 16 bytes originally needing to be subjected to zero padding are fully utilized to carry out BCH and CRC coding, so that the correction efficiency of LDPCis ensured, the probability of occurrence of a wrong floor is reduced, and the bit error rate of data storage is reduced.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of memory, and in particular, to a method for encoding and decoding a nonvolatile memory and a storage system. Background technique [0002] With the rapid development of semiconductor technology, semiconductor memory using semiconductor circuits as storage media has also been rapidly developed. Among them, Nand Flash memory, as a kind of non-volatile memory, has become the most commonly used storage device in the field of data storage because of its many advantages such as fast erasing and writing speed, low power consumption, large capacity, and low cost. However, with the increase of storage density and the emergence of multi-bit storage technology, the bit error rate problem of Nand Flash memory is becoming more and more serious when storing data. How to reduce the bit error rate has become an urgent problem to be solved. [0003] Low Density Parity Check (LDPC) codes have att...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/26G11C16/34
Inventor 王嗣钧杨世贤
Owner 翰顺联电子科技(南京)有限公司
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