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Petal-shaped molybdenum disulfide two-dimensional crystal material as well as preparation method and application thereof

A two-dimensional crystal, molybdenum disulfide technology, applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of insufficient stability, poor substrate uniformity, expensive raw materials, etc., and achieve reliable morphology control, good crystallinity and low preparation cost

Active Publication Date: 2019-06-14
SOUTH CHINA AGRI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, SERS substrates prepared by noble metal nanomaterials also have many disadvantages, such as expensive raw materials, poor substrate uniformity, and insufficient stability.

Method used

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  • Petal-shaped molybdenum disulfide two-dimensional crystal material as well as preparation method and application thereof
  • Petal-shaped molybdenum disulfide two-dimensional crystal material as well as preparation method and application thereof
  • Petal-shaped molybdenum disulfide two-dimensional crystal material as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] 1. Select silicon / silicon dioxide (285nm) as the product substrate, and use acetone, ethanol, and deionized water to perform ultrasonic cleaning for 5 minutes to remove surface impurities, and then dry the surface with dry nitrogen. Use a vacuum plasma cleaner for further surface cleaning, and the cleaning time is 600s.

[0038] 2. Select silicon / silicon dioxide (285nm) as the reactant molybdenum source carrier substrate, the size is 8mm×8mm, use ethanol to ultrasonically clean for 5min, and dry the surface with dry nitrogen.

[0039] 3. Dissolve oxymolybdenum acetylacetonate powder in methanol solution to form a stable sol-gel solution with a concentration of 20 mg / mL. Use a pipette gun to draw 10 mL of oxymolybdenum acetylacetonate solution, drop-coat it on the molybdenum source slide, place the slide on a heating plate at 60°C for 10 seconds, and form a light yellow continuous film on the surface of the slide after annealing. Continue annealing for 5 minutes. After ...

Embodiment 2

[0043] Compared with Example 1, the difference is that 20 mL of molybdenum acetylacetonate solution with a concentration of 10 mg / ml was used for drip coating twice. The carrier gas flow rate was kept constant at 100 sccm during the reaction. When the temperature of the molybdenum source reaction zone reaches 610°C, let the sulfur source reaction furnace start heating, the temperature of the sulfur source reaction zone is set to 160°C, and the temperature of the molybdenum source reaction zone is 750°C.

[0044] Figure 5 The topography of the petal-shaped molybdenum disulfide two-dimensional crystal prepared in this example. From Figure 5 It can be seen from the figure that the length and width of the petals of the product are affected by adjusting the carrier gas flow rate. When the air flow is 100 sccm, the petals become longer and narrower.

Embodiment 3

[0046] 1. Select silicon / silicon dioxide (285nm) as the product substrate, and use acetone, ethanol, and deionized water to perform ultrasonic cleaning for 5 minutes to remove surface impurities, and then dry the surface with dry nitrogen. Use a vacuum plasma cleaner for further surface cleaning, and the cleaning time is 600s.

[0047] 2. Select silicon / silicon dioxide (285nm) as the reactant molybdenum source carrier substrate, the size is 5mm×5mm, use ethanol to ultrasonically clean for 5min, and dry the surface with dry nitrogen.

[0048] 3. Dissolve oxymolybdenum acetylacetonate powder in methanol solution to form a stable sol-gel solution with a concentration of 15 mg / mL. Use a pipette gun to absorb 15 mL of oxymolybdenum acetylacetonate solution, drop-coat it on the molybdenum source slide, and form a light yellow continuous film on the surface of the slide after natural air drying. After annealing for 5 minutes, the continuous film on the surface of the slide breaks in...

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Abstract

The invention discloses a petal-shaped molybdenum disulfide two-dimensional crystal material as well as a preparation method and application thereof. According to the method, an atmospheric pressure chemical vapor deposition method is adopted, and the petal-shaped molybdenum disulfide two-dimensional crystal material is grown on a substrate by heating a reactant for chemical reaction under an inert gas environment. The method has the advantages of simplicity and feasibility and operation convenience. The amount of the reactant is conveniently controlled in the experimental procedures, and uniform supply of a reactant molybdenum source is realized in a large-area range. The prepared product is controllable in morphology characteristic, stable in performance and good in crystallinity, and can be further used for preparing an SERS sensor with high sensitivity and good repeatability, and rapid trace detection on organic molecules is realized.

Description

technical field [0001] The invention belongs to the technical field of semiconductor two-dimensional crystal nanomaterials, and more specifically relates to a petal-shaped two-dimensional molybdenum disulfide crystal material and its preparation method and application. Background technique [0002] In recent years, molybdenum disulfide, as a kind of transition metal sulfide two-dimensional crystal material, has received extensive attention. With the reduction of its atomic layer number, molybdenum disulfide two-dimensional crystal material has good optical transparency, high electron mobility, and adjustable semiconductor energy band structure to realize indirect band gap and direct band gap compared with traditional bulk materials. conversion features. Molybdenum disulfide two-dimensional crystal materials can be used to make photoelectric and sensor devices such as catalytic electrodes for electrocatalytic hydrogen production, field effect transistors with high current on...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/02C30B25/00C30B29/46C30B29/64G01N21/65
Inventor 徐海涛叶俏珏冯曦亮刘兆肃陈婉钧李秀燕张凯翔劳媚媚邓海东龙拥兵
Owner SOUTH CHINA AGRI UNIV
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