Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of boron-doped semiconductor graphite

A technology of semiconductor and boron doping, which is applied in the field of preparation of boron-doped semiconductor graphite, which can solve the problems of many product defects, high cost, and the inability to realize the wide application of graphene, etc., and achieve the effect of easy scale and low cost

Pending Publication Date: 2019-06-04
HUAQIAO UNIVERSITY
View PDF11 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the preparation process of graphene, methods such as vapor phase chemical deposition, silicon carbide pyrolysis, redox, micromechanical exfoliation, and chemical synthesis all have problems such as difficulty in controlling the number of layers, high cost, and many product defects. Wide application in electronic circuits and other fields

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Mix natural graphite particles and boron source (boron, diboron trioxide or boron carbide) evenly, and then heat natural graphite particles and boron source in a high-temperature graphitization furnace. The temperature of the graphitization furnace is 2800 ° C, and the constant temperature time is 30 minutes. , wherein the effective content of boron in the above-mentioned boron source (the effective content of boron refers to the quality of boron element in the boron source) and the mass ratio of natural graphite particles are 10: 100, and the boron-doped semiconductor graphite is obtained after the graphitization furnace is cooled . The boron-doped semiconductor graphite is used as a channel material to prepare a field effect tube, and the semiconductor comprehensive tester keithley 4200A SCS is used to test the graphite field effect tube. The boron-doped semiconductor graphite obtained by the method is P-type semiconductor graphite. The Raman spectrum of the boron-dop...

Embodiment 2

[0022] Mix natural graphite particles and boron source (boron, diboron trioxide or boron carbide) evenly, and then heat natural graphite particles and boron source in a high-temperature graphitization furnace. The temperature of the graphitization furnace is 3000 ° C, and the constant temperature time is 30 minutes. , wherein the effective content of boron in the above-mentioned boron source (the effective content of boron refers to the quality of boron element in the boron source) and the mass ratio of natural graphite particles are 10: 100, and the boron-doped semiconductor graphite is obtained after the graphitization furnace is cooled . The boron-doped semiconductor graphite is used as a channel material to prepare a field effect tube, and the semiconductor comprehensive tester keithley 4200A SCS is used to test the graphite field effect tube. The boron-doped semiconductor graphite obtained by the method is P-type semiconductor graphite. The Raman spectrum of the boron-dop...

Embodiment 3

[0024] Mix natural graphite particles and boron source (boron, diboron trioxide or boron carbide) evenly, and then heat the natural graphite particles and boron source in a high-temperature graphitization furnace. The temperature of the graphitization furnace is 3000°C, and the constant temperature time is 100min. , wherein the effective content of boron in the above-mentioned boron source (the effective content of boron refers to the quality of boron element in the boron source) and the mass ratio of natural graphite particles are 10: 100, and the boron-doped semiconductor graphite is obtained after the graphitization furnace is cooled . The boron-doped semiconductor graphite is used as a channel material to prepare a field effect tube, and the semiconductor comprehensive tester keithley 4200A SCS is used to test the graphite field effect tube. The boron-doped semiconductor graphite obtained by the method is P-type semiconductor graphite. The Raman spectrum of the boron-doped...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of boron-doped semiconductor graphite. Through heat treatment of graphite at 2000-3000 DEG C, activity of carbon atoms in the graphene surface is greatly increased. Driven by concentration gradient, boron is diffused to graphite particles when the boron source is at high temperature. In addition, atomic diameter of boron is not very different from atomic diameter of carbon atoms such that boron atoms replace carbon atoms at high temperature so as to realize alternative doping of boron atoms. Then, the semiconductor graphite with in situ alternativedoping of boron is obtained.

Description

technical field [0001] The invention belongs to the technical field of graphite modification, and in particular relates to a preparation method of boron-doped semiconductor graphite. Background technique [0002] In 2004, Novoselov and Geim et al. used the micromechanical exfoliation method to obtain single-layer graphene sheets for the first time, and characterized their electrical properties. Graphene, as a new type of two-dimensional material, has attracted extensive attention of researchers in various fields since its discovery. This two-dimensional planar crystal composed of only one layer of carbon atoms has many excellent properties, such as: extremely high carrier mobility and saturation drift velocity, sub-micron ballistic transport performance, excellent mechanical properties and extremely High thermal conductivity, and excellent optical properties, etc. As the size of silicon integrated circuits has reached 7nm, the limitation of quantum tunneling effect may lea...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B32/21H01L29/167
Inventor 李四中
Owner HUAQIAO UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com