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Temperature-compensated crystal oscillator, and electronic device

A technology of quartz oscillator and temperature compensation circuit, which is applied to power oscillators, electrical components, etc., can solve the problem of increasing circuit scale, rising cost of temperature-compensating quartz oscillators, and difficulty in improving the oscillation characteristics of temperature-compensating quartz oscillators, etc. problem, to achieve the effect of expanding the variable range

Inactive Publication Date: 2019-05-28
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In the temperature compensation type quartz oscillator of Japanese Patent Application Laid-Open No. 11-88052, only one MOS type capacitor is used, but a first control signal generation circuit and a second control signal generation circuit are required for temperature compensation, so that the Cost increase of temperature-compensated crystal oscillator due to increase in circuit scale
Also, since the control signal generating circuit becomes a source of noise, it is difficult to improve the oscillation characteristics of the temperature compensated crystal oscillator

Method used

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  • Temperature-compensated crystal oscillator, and electronic device
  • Temperature-compensated crystal oscillator, and electronic device
  • Temperature-compensated crystal oscillator, and electronic device

Examples

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no. 1 approach

[0025] figure 1 It is a circuit diagram showing a configuration example of the temperature-compensated crystal oscillator according to the first embodiment of the present invention. This temperature-compensated crystal oscillator (TCXO) is supplied with a power supply potential VDD on the high potential side and a power supply potential VSS on the low potential side lower than the power supply potential VDD (in figure 1 In the illustrated example, the oscillating operation is performed at a ground potential of 0V), thereby generating an oscillating signal OSC.

[0026] like figure 1 As shown, the temperature compensation type quartz oscillator includes an oscillation circuit 10 and a temperature compensation circuit 20 . The oscillation circuit 10 includes a crystal oscillator 11, a constant current source 12, an NPN bipolar transistor QB1, resistors R1 and R2, a first MOS type variable capacitance element CV1, a second MOS type variable capacitance element CV2, and a capaci...

no. 2 approach

[0048] In the second embodiment of the present invention, in figure 1 The structures of the first MOS type variable capacitance element CV1 and the second MOS type variable capacitance element CV2 used in the temperature-compensated crystal oscillator shown are different from those of the first embodiment. In other respects, the second embodiment may be the same as the first embodiment.

[0049] Image 6 It is a cross-sectional view showing a configuration example of the MOS-type variable capacitance element used in the second embodiment. like Image 6 As shown, an N well 47 and P wells 48 and 49 are arranged in the P-type semiconductor substrate 40 . In addition, an N-type contact region (N-type contact region (N + ), in the P wells 48 and 49, P-type contact regions (P + ).

[0050] For example, the first MOS type variable capacitance element CV1 has: a first back gate composed of an N well 47 arranged in the semiconductor substrate 40; and a first gate electrode 63 wit...

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Abstract

A temperature-compensated crystal oscillator, and an electronic device are provided. The temperature-compensated crystal oscillator includes: a crystal resonator; first and second MOS-type variable capacitance elements, each having one end electrically connected to first or second electrodes of the crystal resonator; and a temperature compensation circuit that applies a temperature compensation voltage, which changes in accordance with a temperature, to other ends of the first and second MOS-type variable capacitance elements. The first MOS-type variable capacitance element includes a first back gate provided within a semiconductor substrate, and an N-type first gate electrode provided above the first back gate with an insulating film interposed therebetween; and the second MOS-type variable capacitance element includes a second back gate provided within the semiconductor substrate and having the same conductivity type as the first back gate, and a P-type second gate electrode providedabove the second back gate with an insulating film interposed therebetween.

Description

technical field [0001] The present invention relates to a temperature-compensated quartz oscillator that uses a variable capacitance element to perform temperature compensation of oscillation frequency. In addition, the present invention also relates to electronic equipment and the like using such a temperature-compensated crystal oscillator. Background technique [0002] In a temperature-compensated crystal oscillator (TCXO), for example, a MOS-type variable capacitance element (MOS capacitor) is used as a variable capacitance whose capacitance value changes according to an applied voltage in order to perform temperature compensation for the oscillation frequency. element. In the MOS type variable capacitance element, in order to widen the variable range of the capacitance value, it is considered to reduce the thickness of the gate insulating film. However, gate leakage increases when the gate insulating film is thinned, so there is a limit to the thinning of the gate ins...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03B5/04H03B5/32
Inventor 佐久间盛敬
Owner SEIKO EPSON CORP
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