Microwave plasma diamond film deposition equipment

Abstract

The invention relates to the technical field of microwave plasma chemical vapor deposition, and specifically discloses microwave plasma diamond film deposition equipment. The top and the bottom of a microwave quartz window are in sealing connection with a deposition table and a bottom plate through a sealing gasket group separately; the sealing gasket group comprises an outer-ring sealing gasket and an inner-ring sealing gasket; gas discharge gaps are formed between the outer-ring sealing gasket and the inner-ring sealing gasket; the gas discharge gaps in the top and the bottom are communicated through second ventilation holes; third ventilation holes in the bottom plate are used for communicating the gas discharge gaps with a second exhaust pipe; and the second exhaust pipe is connected with a vacuumizing device. The microwave plasma diamond film deposition equipment is capable of effectively isolating external air, so that a vacuum working environment in a reaction cavity is maintained, and the vacuum leakage rate of MPCVD equipment of the type is effectively lowered; and effective isolation for the reaction cavity from external air is finally realized, so that a beneficial guarantee is provided for preparation for a high-quality product, the quality of the microwave plasma chemical vapor deposition product is improved, and the scientific research and industrialized production needs are met.

Description

technical field [0001] The invention relates to the technical field of microwave plasma chemical vapor deposition, and specifically discloses a microwave plasma diamond film deposition equipment. Background technique [0002] Microwave plasma chemical vapor deposition (MPCVD for short) is a method where the microwave generated by the microwave generator enters the reaction chamber through the isolator through the waveguide, and under the excitation of the microwave, the gas molecules in the reaction chamber are ionized. Plasma is generated, and a diamond film is deposited on the substrate. [0003] The invention patent of notification number CN103668121A discloses a microwave plasma diamond film deposition equipment, including a reaction chamber composed of a reaction chamber upper cover and a reaction table, and a connected rectangular waveguide and a coaxial waveguide are arranged below the reaction chamber; the coaxial waveguide The central axis of the reaction chamber e...

AI Technical Summary

Problems solved by technology

This pressure causes the compression amount of the sealing gasket 7 to become smaller, which adversely affects the sealing of the microwave quartz window 1, and the outside air easily enters the reaction chamber 6 from the top and bottom of the microwave quartz window 1 to pollute the reaction gas (such as figure 1 shown in b and c directions), will eventually lead to a large vacuum leak rate of this type of MPCVD equipment, thereby seriously reducing product quality

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