Monocrystal culture device and monocrystal culture method

A culture device and culture method technology, applied in the direction of single crystal growth, chemical instruments and methods, crystal growth, etc., can solve the problems of uncontrollable solvent diffusion rate, limit the quality of single crystal growth, etc., and achieve reduction of influence, volatility, solubility high effect

Pending Publication Date: 2019-04-19
NINGBO LUMILAN NEW MATERIAL CO LTD +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, the technical problem to be solved by the present invention is to overcome the uncontrollable diffusion rate of the

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Monocrystal culture device and monocrystal culture method
  • Monocrystal culture device and monocrystal culture method
  • Monocrystal culture device and monocrystal culture method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] This embodiment provides a single crystal cultivation device, including a housing unit 1 , a cultivation unit 2 , a temperature control unit 3 and a support unit 4 . Wherein, the accommodation unit 1 has an accommodation cavity, the culture unit 2 and the support unit 4 are disposed in the accommodation cavity, and the temperature control unit 3 is disposed outside the accommodation unit 1 .

[0069] Such as figure 1 As shown, the housing unit 1 includes a culture container 11 and a seal 12 . Wherein, the culture container 11 has an accommodating inner cavity and a third opening that communicates the accommodating inner cavity with the outside world. For example, the culturing container 11 is a cylindrical container, and an accommodating inner cavity is formed inside the cylindrical container, and the top of the cylindrical container Form the 3rd opening; Sealing member 12 is suitable for being installed in the 3rd opening and makes accommodating cavity form sealing ca...

Embodiment 2

[0081] This embodiment provides a method for growing a single crystal. For example, the target material for growing a single crystal is NPAFN, a red-light host material, and the chemical structure of NPAFN is as follows:

[0082]

[0083] Utilize any one single crystal cultivation device provided in embodiment 1 to cultivate, and the cultivation method comprises the following steps:

[0084] S1, adding a second solvent (for example: n-hexane) to the second bottle body 22, the liquid level of the second solvent is lower than the height of the first region;

[0085] S2, install the second cover body 23 on the second opening of the second bottle body 22, the extension part 232 of the second cover body 22 blocks part of the through holes on the first area, and the remaining part of the through holes are opened, record The opening ratio of the through hole;

[0086] S3, take about 5 mg of the target material into the test tube with a clean spatula, add about 3 ml of the first s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a monocrystal culture device, which comprises a storage unit and a culture unit, wherein the culture unit comprises a first bottle, a second bottle, and a second cover. A partof the wall of the periphery of a first region of the second bottle is provided with through holes with a required number. The second cover comprises an enclosed part and an extension part, which is formed on the enclosed part and extends along the vertical direction. After the second cover is mounted on the second opening of the second bottle, the extension part has a first state that part of through holes is opened, and a second state that part of through holes is covered. The second bottle and the second cover are used together so as to adjust the number of the through holes that are covered by the extension part, and the opening rate of through holes in the second bottle is adjusted. When a volatile second solvent is stored in the second bottle, the diffusion rate of the second solventis adjusted by adjusting the opening rate of through holes so as to improve the monocrystal quality. The invention discloses a monocrystal culture method, which utilizes the provided device and obtains high quality monocrystals.

Description

technical field [0001] The invention relates to the technical field of single crystal cultivation, in particular to a single crystal cultivation device and a single crystal cultivation method. Background technique [0002] A crystal is a solid in which the internal particles (molecules, atoms or ions) of a substance are periodically and repeatedly arranged in three-dimensional space, and is the most thermodynamically stable state of existence of a substance. Compared with amorphous materials and thin film materials, crystalline materials show excellent application prospects in the fields of electricity, optics, and magnetism due to their high packing density, good crystal quality, and low grain boundaries. The physical properties of crystals are often determined by the crystal structure, which is determined by the packing relationship of the material molecules. To understand the crystal structure, X-ray single crystal diffraction is required on the crystal, and the crystal ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B7/00
CPCC30B7/00
Inventor 黄生世李奂钦
Owner NINGBO LUMILAN NEW MATERIAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap