Electrically injected silicon-based III-V group edge-emitting nanowire laser and its preparation method

Abstract

The invention discloses a preparation method for an electric injection silicon-based III-V group edge-emitting nanowire lase, and the method comprises the following steps: depositing a silicon dioxidelayer on an SOI substrate, and etching a rectangular groove on the silicon dioxide layer; corroding a v-shaped groove in the top silicon of the SOI substrate below the rectangular groove, and enabling the v-shaped groove to be communicated with the rectangular groove to form a communicating groove; growing an epitaxial structure of the silicon-based III-V group edge emitting nanowire laser in thecommunicating groove; preparing a metal electrode pattern on the silicon-based III-V group edge emitting nanowire laser. According to the invention, the electric injection technological method for epitaxially growing a III-V group nanowire material on the SOI substrate, and meanwhile, a prepared electrode can be used for testing the dynamic characteristics of the silicon-based III-V group edge-emitting nanowire laser.

Description

Technical field [0001] The invention relates to the technical field of optoelectronics, in particular to an electrically injected silicon-based III-V group edge-emitting nanowire laser and a preparation method thereof. Background technique [0002] Since the birth of the first integrated circuit, integrated circuit technology has maintained an ultra-high-speed development, and MOSFET devices with silicon as a substrate have become the core and foundation of modern integrated circuit technology. As the feature size of devices continues to shrink, integrated circuit technology is limited by a series of basic physical issues and process technology in terms of speed, power consumption, integration, and reliability. In order to achieve greater storage capacity and higher transmission speed, the traditional communication technology that uses electrons as information transmission carriers can no longer meet the needs of practical applications, and it has become a mainstream development ...

AI Technical Summary

Problems solved by technology

However, since the refractive index of III-V group materials (such as InP, GaAs) in the infrared band is smaller than that of Si, the photons generated in III-V group materials are easy to leak into the silicon substrate, resulting in no optical mode

At present, photolasing has been achieved by hollowing out the Si under the III-V nanowires, or by removing the III-V nanowires from the silicon substrate and placing them on the silicon dioxide; however, hollowing out The method of Si below the empty III-V nanowires has the risk of breaking the III-V nanowires in practice, and the method of removing the III-V nanowires from the silicon substrate and placing them on silicon dioxide is not applicable In optoelectronic integration

Images