Atomic layer deposition equipment and cleaning method thereof

Abstract

The invention discloses atomic layer deposition equipment and a cleaning method thereof. The atomic layer deposition equipment comprises a chamber, an exhaust pipeline, a gas inlet assembly and a temperature controlling unit; the exhaust pipeline is connected between the chamber and a vacuum pump; the gas inlet assembly is connected to the chamber and used for providing cleaning gas containing reaction ions, and the cleaning gas reacts with a process post-deposition product to generate an intermediate product; and the temperature controlling unit is used for heating the atomic layer depositionequipment, so that the intermediate product is in a gas state. A main gas inlet pipeline of the atomic layer deposition equipment can provide the cleaning gas to the chamber, the chamber is providedwith the temperature controlling unit, the intermediate product is in the gas state, and thus the atomic layer deposition equipment can be effectively cleaned under the condition of not decreasing thetemperature and not detaching equipment parts.

Description

technical field [0001] The present invention relates to the technical field of semiconductor deposition equipment cleaning, and more specifically, to an atomic layer deposition equipment and a cleaning method thereof. Background technique [0002] In the field of semiconductor device manufacturing, several layers of thin films with different materials and thicknesses are formed on the substrate to form various types of semiconductor devices, such as integrated circuits, solar cells, displays, diodes, etc. Common methods of thin film deposition include atomic layer deposition (Atomic Layer Deposition, ALD), physical vapor deposition (Physical Vapor Deposition, PVD), chemical vapor deposition (Chemical Vapor Deposition, CVD) and so on. As the size of semiconductor devices continues to shrink, atomic layer deposition technology has gradually replaced chemical vapor deposition technology and has become the mainstream of the industry. [0003] In the atomic layer deposition proc...

AI Technical Summary

Problems solved by technology

With the increase of the number of growth furnaces, the quantity and thickness of the deposition products after the formation process increase. When the adhesion between the crystal particles of the deposition products after the process is less than the gravity of the crystal particles, the crystal particles will fall off, and in the reaction chamber Suspended particles are formed in the process, and the increase in the number of suspended particles makes the process not meet the requirements, and the equipment needs to be cleaned and maintained

However, the current cleaning and maintenance measures for equipment require operations such as cooling down, parts removal, and cavity opening. The maintenance time is long and the cost is high.

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