Preparation method of high yield fluorescent CdS/CdSe/CdS quantum well and preparation method of light emitting diode

A technology of light-emitting diodes and fluorescent quantum yields, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of quantum dot fluorescence quenching, luminous efficiency cannot be realized, nuclear deformation, etc., and achieve the effect of improving external quantum efficiency

Inactive Publication Date: 2019-04-05
LINGNAN NORMAL UNIV
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Problems solved by technology

[0003] However, when the traditional core-shell structure is used to cover the luminescent core, as the thickness of the shell layer increases, the fluorescence quantum yield will first increase and then decrease. This is because the thick shell layer will severely squeeze the core, causing serious deformation of the core. , leading to fluorescence quenching of quantum dots, so that the luminous efficiency cannot achieve 100%

Method used

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  • Preparation method of high yield fluorescent CdS/CdSe/CdS quantum well and preparation method of light emitting diode
  • Preparation method of high yield fluorescent CdS/CdSe/CdS quantum well and preparation method of light emitting diode

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Embodiment

[0036] 1. Precursor synthesis

[0037] To synthesize 0.5mmol / mL Cd(OA)2, add 5mmol CdO, 5mL OA and 5mL 1-ODE into a three-neck flask, raise the temperature to 150°C, pump for half an hour, and then pass in argon to raise the temperature to 250°C to stop.

[0038] 0.1mmol / mL Cd(OA)2 synthesis, change the amount of CdO, the method is the same as above.

[0039] 2. CdS / CdSe / CdS quantum well synthesis

[0040] (1) To synthesize CdS core, add 9mL 1-ODE and 0.6mL dissolved precursor Cd(OA)2 into the three-neck flask, raise the temperature to 150°C, pump for half an hour, then pass in argon gas to raise the temperature to 270°C, and inject quickly 0.5mL S-ODE (0.25mmol / mL), lower the temperature to 250°C and keep it warm for 10min, stop the reaction, centrifuge the stock solution to remove precipitation, add an appropriate amount of toluene and excess ethanol to the supernatant until the solution is completely cloudy, then centrifuge the solution at this time , take the precipitate...

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Abstract

The invention relates to a preparation method of a high yield fluorescent CdS / CdSe / CdS quantum well and a preparation method of a light emitting diode, belonging to the technical field of preparationof nanocrystalline materials and light emitting diodes. The preparation method of a high yield fluorescent CdS / CdSe / CdS quantum well comprises the steps of: preparing a CdS nuclear quantum dots with grain sizes about 2.6nm by employing a high temperature thermal injection method; mixing the purified quantum dots with a ligand solvent at a high temperature, adding mixed precursor of positive ions and negative ions dropwise into the mixture to obtain CdS / CdSe quantum dots coated with a CdSe shell layer; continuously adding the mixed anion and cation precursor dropwise to continuously perform reactive synthesis of a CdS / CdSe / CdS quantum well; and obtaining a CdS / CdSe / CdS quantum well light emitting diode by arranging a glass base body, a positive electrode, a hole transport layer, a CdS / CdSe / CdS quantum well luminescence layer, an electron transfer layer and a negative electrode in order from bottom to top. The CdS / CdSe / CdS quantum dot quantum well prepared by the method can allow the luminous efficiency to finally reach 100%, and when the CdS / CdSe / CdS quantum well is taken as a light-emitting layer of the light emitting diode, the external quantum efficiency of the LED can be greatlyimproved.

Description

technical field [0001] The invention relates to a preparation method of a quantum well and a light emitting diode thereof, in particular to a high fluorescence yield and approximately spherical CdS / CdSe / CdS quantum well and a preparation method of a light emitting diode thereof, which belong to the preparation technology of nanocrystalline materials and light emitting diodes field. Background technique [0002] Colloidal semiconductor nanocrystals have narrow luminescence spectra and high photoluminescence quantum yields, and have attracted extensive attention for applications in displays, lasers, and solar cells. However, many hole and electron defect states are formed on the surface of quantum dots, which affect the luminescent properties of quantum dots. There are two main ways to passivate the surface state of quantum dots and increase the luminous efficiency and photochemical stability of quantum dots: one is to modify the surface of quantum dots with organic ligands; ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/28H01L33/00
Inventor 张婷婷邹时兵李栋宇徐兵
Owner LINGNAN NORMAL UNIV
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