Source-drain ion implantation method and system

Abstract

The invention discloses a source-drain ion implantation method and system. The method comprises the steps of: establishing a machine and a work-in-process information table; searching ion implantationmachines capable of performing source-drain ion implantation for a wafer by employing a continuous implantation process in a condition that the next processing process of the current batch of wafersis a process of executing source-drain ion implantation; setting the found ion implantation machines, and integrating the layered implantation processes into continuous implantation process; accordingto the found ion implantation machines and the wafers to be subjected to the source-drain ion implantation process, forming a first dispatch list; according to the first dispatch list, correspondingly distributing the wafers to the ion implantation machines; and performing source-drain ion implantation of the wafers according to the continuous implantation process by the ion implantation machines. The above-mentioned ion implantation process for forming an N-well is completed in the same ion implantation machine to achieve continuous source-drain implantation, reduce generation of wafer defects and reduce yield loss.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a source-drain ion implantation method and an implantation system. Background technique [0002] The manufacturing process of semiconductors involves hundreds of detailed and complex processes, which must be skillfully coordinated according to strict manufacturing schedules. The semiconductor manufacturing process may include photolithography process, etching process, deposition process, polishing process, rapid thermal treatment process, implantation process, annealing process and so on. Thus, specialized equipment is required to perform the above-mentioned various processes according to well-defined manufacturing rules. [0003] With the scale of semiconductor production, the requirements for automation are getting higher and higher, and the Manufacturing Execution System (MES) has emerged as the times require. MES is a management system software used to track ...

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Problems solved by technology

[0013] The object of the present invention is to provide a source-drain ion implantation method and an implantation system, through which the above-mentioned ion implantation process for forming an N well is completed in the same ion implantation machine by controlling the source-drain ion implantation method to solve the problem of When the waiting time of the round waiting for the F ion implantation machine to complete the operation exceeds Q-time, after the F ion implantation is performed on it, the implanted F element overflows the surface of the wafer, which makes the subsequent product defects too high, and the product is scrapped, resulting in good quality. rate loss problem

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