Semiconductor structure and method of forming same
A semiconductor and pattern layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor semiconductor structure performance, and achieve the effects of reducing loss, saving process costs, and simplifying process flow
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[0036] There are many problems in the method of forming the semiconductor structure, for example, the performance of the formed semiconductor structure is poor.
[0037] In combination with the formation method of the semiconductor structure, the reasons for the poor performance of the formed semiconductor structure are analyzed:
[0038] A substrate is provided, the substrate includes a first region and a second region; a dummy gate layer is formed on the substrate in the first region and the second region; a plurality of discrete first gate layers are formed on the dummy gate layer A pattern layer; a second pattern layer is formed on the dummy gate layer in the second region; the distance between the centers of adjacent second pattern layers is greater than or equal to twice the distance between adjacent first pattern layers; The first pattern layer and the second pattern layer are used as masks to etch the dummy gate layer to form a dummy gate.
[0039] Wherein, in order t...
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