A three-dimensional coupler based on through-silicon via and its preparation method

Abstract

The invention discloses a three-dimensional coupler based on through-silicon vias and a preparation method thereof, which relate to the field of three-dimensional integrated circuits, mainly through the use of three-dimensional integration technology of through-silicon vias and a multi-node structure, combined with reactive ion etching technology and electrochemical deposition , Plasma-enhanced chemical vapor deposition and chemical vapor deposition methods, etc., effectively reduce the length of interconnection lines and chip area, improve data transmission bandwidth and integration, and realize the simultaneous improvement of integrated circuit performance and reduce The purpose of power consumption, weight reduction and volume reduction solves the shortcomings of existing technologies, such as large occupied chip area, small adjustable space for coupling, orientation and other indicators, especially the difficulty of improving isolation and meeting the requirements of integration.

Description

technical field [0001] The invention belongs to the field of three-dimensional integrated circuits, and in particular relates to a three-dimensional coupler based on through-silicon holes and a preparation method thereof. Background technique [0002] Three-dimensional integration technology distributes the functional modules of the circuit system on different chips (which can be chips with different functions and different processes), and forms a three-dimensional stack through low-temperature bonding. In a three-dimensional integrated circuit (3-Dimension Integrated Circuit, 3-D IC), the electrical connection between the upper and lower modules is realized through a through-silicon via (TSV), which has a decisive effect on the performance of the entire system. 3-D IC has the advantages of being able to greatly reduce the global interconnect length, increase data transmission bandwidth, reduce chip area, increase integration, and realize chip heterogeneous integration. It c...

AI Technical Summary

Problems solved by technology

The traditional planar microwave coupler not only occupies a huge chip area, but also has little room for adjustment of coupling degree, directivity and other indicators, especially the isolation degree is difficult to improve

In addition, discrete three-dimensional microwave couplers based on low-temperature co-fired ceramic technology are difficult to meet the requirements of integration

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